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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 2.05mm |
| Model | SQA401CEJW-T1_GE3 |
| Width | 2.05mm |
| Mount Type | Surface |
| Series | P-Channel 20 |
| Maximum Operating Temperature | 175°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 7 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.75A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Maximum Power Dissipation Pd | 13.6W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -0.8V |
Vishay SQA401CEJW-T1_GE3 is a robust P-Channel MOSFET designed for demanding electronic and automotive applications requiring efficient switching and control at low voltages.
Featuring a maximum continuous drain current of 3.75 A and a drain-source voltage rating of 20 V, this MOSFET combines compact 7-pin SC-70 package with high performance characteristics.
The device exhibits a maximum drain-source resistance (Rds) of 200 mΩ, ensuring low conduction losses and improved energy efficiency in power circuits.
With a typical gate charge of 3.5 nC at 3.5 V gate voltage, it supports fast switching, making it suitable for power management, signal switching, and electronic load applications.
Operating temperature range spans from -55°C to 175°C, certified to automotive AEC-Q101 standards, demonstrating reliability in harsh industrial environments. Its wettable flank terminals improve solderability and inspection, enhancing assembly quality and longevity of the mounting joints.
Maximum continuous drain current of 3.75 A. Drain-source voltage rating of 20 V. 7-pin SC-70 surface mount package. Maximum drain-source on-resistance of 200 mΩ. Typical gate charge of 3.5 nC at Vgs = 3.5 V. Maximum power dissipation of 13.6 W.
Operating temperature range: -55°C to 175°C. AEC-Q101 automotive qualification. Wettable flank terminals for solder joint reliability. Forward voltage of -0.8 V and maximum gate-source voltage of 12 V.
This MOSFET is ideal for industrial, automotive, electronic controls, power management, and consumer electronics applications requiring reliable surface-mount transistor performance at low voltage and medium current.
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