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Infineon 600V CoolMOS CFD7 N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 IPP60R125CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP60R125CFD7XKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | 600V CoolMOS CFD7 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Maximum Power Dissipation Pd | 92W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features a maximum continuous drain current of 18 A and a maximum drain source voltage of 600 V.
- Equipped with a low gate charge of 36 nC to optimize switching efficiency.
- Packaged in a durable 3-pin TO-220 through-hole mount for reliable installation.
- Maximum power dissipation rating of 92 W enables high power handling capabilities.
- Typical forward voltage drop of 1 V reduces energy loss during conduction.
- Offers a maximum drain-source resistance of 125 milliohms for efficient performance.
- Includes a maximum gate-source voltage rating of 20 V enhancing gate control.
- Designed without automotive certification; suitable for industrial and electronic applications.
Product Description
Infineon IPP60R125CFD7XKSA1 600V CoolMOS CFD7 N-Channel MOSFET is a high voltage power semiconductor device engineered with the innovative CoolMOS CFD7 technology based on the superjunction principle, pioneering high-efficiency power switching.
This MOSFET type is optimized for industrial power conversion applications requiring robust performance and efficient switching. It features a maximum continuous drain current of 18 A, a drain-source voltage rating of 600 V, and a maximum power dissipation of 92 W, making it suitable for demanding power electronics circuits.
The device is housed in a 3-pin TO-220 package configured for through-hole mounting, ensuring secure mechanical and electrical connections in PCB assemblies.
Key technical advantages include an ultra-fast body diode, low gate charge (36 nC) for reduced switching losses, and best-in-class reverse recovery charge (Qrr) which enhances efficiency and thermal performance.
The MOSFET also offers robustness against high dv/dt and diF/dt stress conditions, improving overall system reliability in power management, inverter circuits, and industrial control systems.
Maximum continuous drain current: 18 A. Maximum drain-source voltage: 600 V. Package type: 3-pin TO-220 through-hole mount. Maximum drain-source resistance: 125 mΩ. Typical gate charge at Vgs: 36 nC. Maximum power dissipation: 92 W.
Maximum gate-source voltage: 20 V. Device dimensions: length 10.36 mm, width 4.57 mm, height 9.45 mm. Forward voltage: 1 V. This product is well-suited for use in power supplies, motor drives, industrial control, and high-voltage switching applications in electronic and electrical industries.
The device complies with RoHS requirements and is classified as new condition with India as the country of origin. Explore more Infineon semiconductor products and enhance your circuitry with reliable and efficient power components from EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 A.
This MOSFET has a maximum drain-source voltage rating of 600 V.
It has a maximum power dissipation rating of 92 W, allowing for high power handling capabilities.
The dimensions are 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.
The typical gate charge at Vgs is 36 nC, which helps optimize switching efficiency.
This model has a maximum gate-source voltage rating of 20 V.
The maximum drain-source resistance is 125 milliohms, contributing to efficient performance.
It is packaged in a 3-pin TO-220 configuration for through-hole mounting.
This MOSFET is suitable for power supplies, motor drives, industrial control, and high-voltage switching applications.
The typical forward voltage drop is 1 V, which reduces energy loss during conduction.
This model features an N-channel configuration, which is common for power applications.
The country of origin for this product is India.
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