Infineon CoolMOS N-Channel MOSFET, 70 A, 100 V Enhancement Mode, 3-Pin TO-263 IPB70N10S312ATMA1

The Infineon IPB70N10S312ATMA1 CoolMOS N-Channel MOSFET is engineered for high-performance power switching applications. It is designed with an enhancement mode channel type, capable of handling a continuous drain current up to 70 A and a drain-source voltage rating of 100 V, making it suitable for demanding automotive and industrial environments.

This device features a TO-263 3-pin package supporting through-hole mounting to ensure mechanical stability. It boasts a low maximum drain-source resistance of 11.3 mΩ, improving efficiency by reducing conduction losses. The typical gate charge of 51 nC at a gate-source voltage of 5 V allows for fast switching and reduced gate drive losses.

Capable of operating within a temperature range from -55°C to 150°C and compliant with the automotive AEC-Q101 standard, the MOSFET ensures reliability and robustness in harsh conditions. Its maximum power dissipation of 129 W allows handling significant power without overheating, suitable for power management in automotive and industrial systems.

The device is RoHS compliant, 100% avalanche tested, and offers consistent forward voltage behavior at 900 mV for optimal conduction. Its compact size with dimensions of 10.31 mm length, 9.45 mm width, and 4.57 mm height make it adaptable to space-constrained applications.

This MOSFET is ideal for use in power supplies, motor controls, automotive electronics, and other industrial and laboratory power regulation applications. It provides a combination of performance, quality, and efficiency essential for modern electronic systems demanding high reliability.

Features CoolMOS technology optimized for automotive applications. Designed for enhancement mode operation ensuring efficient switching performance. Package type TO-263 with through-hole mount and 3 pins for secure PCB installation.

Maximum power dissipation of 129 watts suitable for high power applications. Operates reliably from -55°C up to 150°C for harsh environment use. Typical gate charge is 51 nanoCoulombs at 5 volts gate-source voltage. Low maximum drain-source resistance of 11.3 milliohms minimizes conduction losses.

Automotive standard compliant with AEC-Q101 for quality assurance. Forward voltage rated at 900 millivolts ensuring efficient conduction. Compact dimensions with length 10.31 mm, width 9.45 mm, and height 4.57 mm. Discover more Infineon MOSFETs and electronic components at EnvMart to support your industrial, automotive, or laboratory electronic design projects.