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Infineon CoolMOS N-Channel MOSFET, 4 A, 800 V Enhancement Mode, 3-Pin TO-220 IPP80R1K4P7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.36mm |
| Model | IPP80R1K4P7XKSA1 |
| Width | 15.95mm |
| Mount Type | Surface |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 32W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Designed primarily for flyback applications including adapters, chargers, LED drivers, and audio SMPS.
- Offers up to 0.6% efficiency gain and lower MOSFET temperature by 2°C to 8°C compared to predecessors.
- Enables higher power density designs due to low switching losses and low RDS(on).
- Surface mount device with a compact 3-pin TO-220 package for easy integration.
- Wide operating temperature range from -55°C to 150°C for industrial applications.
- Maximum power dissipation of 32 W ensures robust performance under load.
- Maximum gate-source voltage of 20 V and typical gate charge of 10 nC facilitate easy driving.
- Stable forward voltage of 900 mV enhances energy efficiency.
Product Description
Infineon IPP80R1K4P7XKSA1 CoolMOS N-Channel MOSFET is a high-performance enhancement mode transistor designed for optimal performance in flyback converter applications including adapters, chargers, LED drivers, and audio switching power supplies. Its superior efficiency, reducing losses by up to 0.6%, and decreased junction temperature by 2°C to 8°C compared to predecessor and competitor devices enable improved system reliability and longevity.
The device features a standard 3-pin TO-220 surface mount package, facilitating easy mounting and heat dissipation. It supports a maximum continuous drain current of 4 A and a voltage rating of 800 V, making it suitable for a broad range of industrial electronics applications. The low on-resistance (RDS) of 140 mΩ improves power density and reduces thermal stress on circuits.
Operating temperature ranges from -55°C to 150°C, allowing use in varied environmental conditions. The maximum gate-source voltage is 20 V, with a typical gate charge of 10 nC, promoting efficient switching and control in power management circuits. The forward voltage of 900 mV contributes to lower conduction losses.
This Infineon CoolMOS device supports designs targeted at industrial power supplies, LED lighting, charger solutions, and other electronics requiring reliable power switching components. Despite lacking certifications for automotive use, it meets standard industrial demands effectively.
Designed primarily for flyback converters, adapters, LED drivers, and audio SMPS. Up to 0.6% efficiency gain versus previous generation devices. Lower operating temperature enhances longevity and reliability. Compact surface mount TO-220 package with 3 pins simplifies integration.
High voltage rating of 800 V and continuous current capacity of 4 A. Wide operating temperature range: -55°C to 150°C. Low on-resistance improves power density and reduces switching losses. Typical gate charge of 10 nC supports responsive switching.
Forward voltage of 900 mV contributes to energy efficiency.
Infineon components are widely used in industrial, power management, and consumer electronics sectors. Explore more MOSFETs and semiconductor solutions in EnvMart's Electronics & Electricals category for efficient and reliable circuit designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
It has a maximum drain-source voltage rating of 800 V.
The typical gate charge is 10 nC at the specified gate-source voltage.
The dimensions of the TO-220 package are 10.36 mm in length, 15.95 mm in width, and 4.57 mm in height.
This model operates within a temperature range of -55°C to 150°C.
The maximum power dissipation is 32 W.
The maximum drain-source resistance (RDS) is 140 mΩ.
It is primarily designed for flyback applications, including adapters, chargers, LED drivers, and audio switching power supplies.
The forward voltage is 900 mV, contributing to lower conduction losses.
The TO-220 package has 3 pins.
This MOSFET features an N-channel type.
It belongs to the CoolMOS series.
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