Infineon OptiMOS N-Channel MOSFET, 126 A, 40 V Enhancement Mode, 8-Pin TSDSON Package BSZ025N04LSATMA1

Infineon's BSZ025N04LSATMA1 is a high-performance OptiMOS N-Channel MOSFET designed for power electronics applications requiring efficient switching and high current handling capability. With a maximum continuous drain current of 126 A and a drain-source voltage rating of 40 V, this device is well suited for synchronous rectification and fast switching circuits in industrial and consumer electronics.

The MOSFET features an 8-pin TSDSON surface-mount package, providing a compact form factor with dimensions of 5.35 mm in length, 6.1 mm in width, and 1.2 mm in height. Its enhancement mode channel type offers optimized switching performance, contributing to system power efficiency. The device benefits from low on-resistance Rds(on) of 2.5 mΩ, which reduces conduction losses significantly.

Operating temperature range spans from -55°C to 150°C, enabling use in demanding environments and ensuring reliability. The maximum power dissipation capacity is 69 W, with a gate charge of 37 nC at Vgs, facilitating efficient gate control. The device can tolerate a maximum gate-source voltage of 20 V, offering a robust operating margin for control signals.

Infineon’s OptiMOS technology provides superior thermal resistance and has been 100% avalanche tested, delivering a high level of ruggedness necessary in industrial, automotive (non-automotive rated device here), manufacturing, and power management systems. The typical forward voltage drop of 1 V helps improve overall power conversion efficiency.

The device features an 8-pin TSDSON surface mount package for compact PCB layouts. Enhancement mode channel ensures optimized switching behavior for fast applications. Low maximum drain-source resistance (Rds) minimizes conduction losses.

Wide operating temperature range from -55°C to 150°C supports durability. Efficient gate drive with typical gate charge of 37 nC at Vgs. Maximum power dissipation rated at 69 W supports thermal management. Maximum gate-source voltage of 20 V allows robust control.

Compact dimensions: 5.35 mm (L) x 6.1 mm (W) x 1.2 mm (H). Forward voltage drop of approximately 1 V enhances efficiency. OptiMOS technology delivers superior performance and reliability.

This MOSFET is ideal for industrial electronic circuits, power supplies, and applications requiring efficient, high-current switching. It supports a variety of sectors including manufacturing, laboratory equipment, renewable energy inverters, and general power management.

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