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Infineon OptiMOS-T N-Channel MOSFET, 70 A, 120 V Enhancement Mode, 3-Pin TO-220 IPP70N12S311AKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.36mm |
| Model | IPP70N12S311AKSA1 |
| Width | 4.57mm |
| Mount Type | Through Hole |
| Series | OptiMOS-T |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 11.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High current rating of 70 A suitable for demanding power electronics.
- 120 V maximum drain-source voltage ensures operation under high voltage conditions.
- Enhancement mode channel provides precise control for switching.
- Robust TO-220 3-pin package facilitates through-hole mounting for reliable installation.
- Low on-resistance of 11.6 mΩ reduces conduction losses.
- Maximum gate-source voltage of 20 V for stable gate control.
- Typical gate charge of 51 nC at Vgs reduces switching losses.
- Wide operating temperature range from -55°C to 175°C suitable for harsh environments.
Product Description
Infineon IPP70N12S311AKSA1 OptiMOS-T N-Channel MOSFET offers superior performance and reliability for a variety of semiconductor power switching applications. With a continuous drain current rating of 70 A and a maximum drain-source voltage of 120 V, this enhancement mode MOSFET housed in a 3-pin TO-220 package is designed for efficient switching and thermal management in industrial, automotive, and commercial electronic systems.
The device features a low drain-source resistance of 11.6 mΩ which minimizes conduction losses and enhances efficiency. The maximum gate-source voltage of 20 V facilitates robust gate control, while the typical gate charge of 51 nC ensures low switching losses for high frequency operation. The MOSFET’s wide operating temperature range from -55°C to 175°C and maximum power dissipation rating of 125 W support demanding environmental and power conditions.
This MOSFET complies with the AEC-Q101 automotive qualification standard, making it suitable for applications requiring automotive-grade quality and durability. It is 100% avalanche tested to ensure ruggedness under transient conditions.
Applications include power supplies, motor drives, automotive electronics, industrial automation, and high-efficiency DC-DC conversion systems. The TO-220 through-hole mount package allows easy installation and reliable heat dissipation.
High current rating of 70 A suitable for demanding power electronics. 120 V maximum drain-source voltage ensures operation under high voltage conditions. Enhancement mode channel provides precise control for switching. Robust TO-220 3-pin package facilitates through-hole mounting for reliable installation.
Low on-resistance of 11.6 mΩ reduces conduction losses. Maximum gate-source voltage of 20 V for stable gate control. Typical gate charge of 51 nC at Vgs reduces switching losses. Wide operating temperature range from -55°C to 175°C suitable for harsh environments.
Maximum power dissipation capacity of 125 W supports high power applications. AEC-Q101 automotive standard qualified for enhanced reliability. Explore the Infineon MOSFET category for complementary components and related semiconductor devices at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 70 A.
This MOSFET has a maximum drain-source voltage rating of 120 V.
The on-resistance is 11.6 mΩ, which helps reduce conduction losses.
The typical gate charge at Vgs is 51 nC, which minimizes switching losses.
The maximum gate-source voltage is 20 V, providing stable gate control.
It operates within a temperature range of -55°C to 175°C.
This model is housed in a TO-220 package, which allows for through-hole mounting.
The maximum power dissipation capacity of this MOSFET is 125 W.
Yes, it complies with the AEC-Q101 automotive qualification standard.
The dimensions are 10.36 mm in length, 4.57 mm in width, and 9.45 mm in height.
It is suitable for applications such as power supplies, motor drives, automotive electronics, and industrial automation.
This model uses an enhancement mode N-channel.
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