Infineon CoolMOS C7 N-Channel MOSFET 7 A 650 V Enhancement 3-Pin TO-220 IPA65R225C7XKSA1

Infineon IPA65R225C7XKSA1 CoolMOS C7 N-Channel MOSFET is a high-voltage power transistor designed using super junction technology pioneered by Infineon Technologies. It offers an efficient solution for high-frequency switching with reduced gate charge and enhanced reliability.

With a maximum continuous drain current of 7 amperes and a maximum drain-source voltage rating of 650 volts, this MOSFET is suitable for industrial electronics, power management systems, and other high voltage applications. The device comes in a TO-220 package with through-hole mounting and a 3-pin layout, facilitating easy integration into printed circuit boards.

The CoolMOS C7 series is engineered for fast switching performance, enabling system cost and size reductions by minimizing cooling requirements. Its low maximum Rds(on) of 225 milliohms ensures low conduction losses and improved efficiency in power circuits.

This MOSFET is ideal for use in power supplies, motor controls, and other industrial semiconductor applications that require reliable and efficient switching components. Employs CoolMOS C7 super junction technology for high efficiency.

N-Channel enhancement mode providing stable switching operation. TO-220 package with through-hole mount for robust physical support. Maximum continuous drain current of 7 A suitable for moderate current loads. Maximum drain-source voltage of 650 V allowing high voltage operation.

Low on-resistance at 225 milliohms reduces power losses. 3-pin configuration convenient for power circuits. Set includes one IPA65R225C7XKSA1 MOSFET. Ideal for industrial, electronic components assembly, HVAC controls, manufacturing equipment, and power management systems.

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