Infineon CoolMOS C7 N-Channel MOSFET, 50 A, 600 V, 4-Pin TO-247 IPZ60R040C7XKSA1

Infineon IPZ60R040C7XKSA1 CoolMOS C7 N-Channel MOSFET is a high-performance power transistor designed to handle continuous drain currents up to 50 A and voltage ratings of 600 V. This 4-pin TO-247 package device is optimized for power factor correction (PFC), telecom rectifiers, and high-frequency switching applications where efficiency and thermal performance are critical.

The CoolMOS C7 series MOSFETs achieve approximately 50% lower turn-off energy losses (Eoss) compared to earlier CoolMOS CP series, improving total cost of ownership via reduced power dissipation and energy costs in large scale PSU and high power density charger designs.

Featuring an enhancement channel mode and rugged body diode, this MOSFET supports reliable operation across harsh industrial environments with operating temperatures from -55°C to 150°C. A low drain-source on-resistance of 40 milliohms and typical gate charge of 107 nC at gate voltage ensure efficient switching performance and suitability for hard switching topologies.

The device is housed in a TO-247 4-pin through-hole package with physical dimensions of approximately 41.42 mm height, 16.13 mm length, and 5.21 mm width. It is ideal for industrial power management, server power supplies, telecom rectifiers, and HVAC applications.

Benefits include reduced switching losses, increased switching frequency capability, and enhanced efficiency gains of up to 0.7% in PFC and LLC converter topologies. For example, in a 2.5kW server power supply unit, using this MOSFET can reduce energy costs by approximately 10% due to lower switching losses.

CoolMOS C7 series reduces turn-off losses by around 50% compared to prior models. Low on-resistance of 40mΩ offers best-in-class conduction performance. High power dissipation rating of 227 W supports demanding industrial loads.

Wide operating temperature range from -55°C to 150°C enables rugged usage. 4-pin TO-247 through hole mounting for straightforward integration. Enhanced switching speed due to low gate charge (107 nC). Rugged body diode enhances device reliability.

Typical forward voltage drop of 900 mV during conduction.

This Infineon MOSFET is new, compliant with industry standards, and manufactured predominantly in India. It serves critical roles in power supply design, industrial equipment, manufacturing, and electronic system control. For technical users seeking high efficiency and durable MOSFETs, the IPZ60R040C7XKSA1 model from Infineon's CoolMOS C7 series is an excellent choice.

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