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onsemi Power MOSFET N-Channel 40A 650V TO-247 Package Enhancement Mode 3-Pin NTHL082N65S3HF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | NTHL082N65S3HF |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | NTHL |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 82mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 313W |
| Typical Gate Charge Qg @ Vgs | 79nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.3V |
Key Features
- High voltage super-junction MOSFET with charge balance technology.
- Low on-resistance for improved conduction efficiency.
- Enhancement mode channel type designed for superior switching performance.
- Maximum continuous drain current of 40A with 650V drain-source voltage.
- TO-247 through-hole package with 3 pins for easy mounting.
- Maximum power dissipation up to 313W ensuring robust operation.
- Operating temperature range from -55°C to 150°C for various industrial applications.
- RoHS compliant and Pb-free construction for environmental safety.
Product Description
onsemi NTHL082N65S3HF is a high voltage N-Channel Power MOSFET designed with advanced charge balance and super-junction technology to provide exceptionally low on-resistance and gate charge. Packaged in a durable TO-247 three-pin through-hole package, this MOSFET supports a maximum continuous drain current of 40A and a drain-source voltage of 650V, making it ideal for high power switching and amplification in industrial, electronic, and power management applications.
The enhancement mode channel ensures reliable and precise control, while the 313W maximum power dissipation rating provides robust thermal handling for demanding environments. This device operates effectively between -55°C and 150°C and meets RoHS standards, making it suitable for environmentally conscious electronics design.
Key functional characteristics include a typical gate charge of 79nC at Vgs, a maximum gate-source voltage of 30V, and a low forward voltage of 1.3V, contributing to efficient switching and power control. Its compact dimensions of 15.9mm length, 21.1mm width, and 5.1mm height enable easy integration into PCB layouts.
Offers outstanding conduction loss reduction and switching speed enhancements. Utilizes charge balance technology to optimize device performance and reliability. Designed for through-hole mounting in power supplies, motor drivers, and industrial electronics.
Compliant with environmental regulations, ensuring sustainability in manufacturing. Ideal for industrial, laboratory, electronic manufacturing, and power management applications. Set contains one onsemi NTHL082N65S3HF Power MOSFET device.
Explore a broader range of semiconductor components and Power MOSFET devices in EnvMart's Electronics & Electricals category for comprehensive solutions in industrial and electronic systems.
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Frequently Asked Questions
The maximum continuous drain current for the NTHL082N65S3HF is 40A.
This model can handle a maximum drain-source voltage of 650V.
The maximum power dissipation rating is 313W, allowing for robust thermal handling.
The operating temperature range for this MOSFET is from -55°C to 150°C.
It is packaged in a TO-247 through-hole package with 3 pins for easy mounting.
The typical gate charge at Vgs is 79nC.
The maximum gate-source voltage for the NTHL082N65S3HF is 30V.
The forward voltage of this MOSFET is 1.3V.
The dimensions are 15.9mm in length, 21.1mm in width, and 5.1mm in height.
Yes, the NTHL082N65S3HF is RoHS compliant and Pb-free, ensuring environmental safety.
This model uses an enhancement mode N-channel type for superior switching performance.
It is suitable for high power switching and amplification in industrial, electronic, and power management applications.
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