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Infineon OptiMOS 2 N-Channel MOSFET 1.5 A 20 V Enhancement Mode Surface Mount SOT-363 6-Pin BSD214SNH6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1mm
Length 2.02mm
Model BSD214SNH6327XTSA1
Width 1.35mm
Mount Type Surface
Series OptiMOS 2
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.5A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 250mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 0.5W
Typical Gate Charge Qg @ Vgs 0.8nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf 1.1V

Key Features

  • Operates in enhancement mode ensuring controlled switching.
  • Features a low maximum drain-source resistance of 250 milliohms for efficient power use.
  • Supports maximum power dissipation of 0.5 watts for reliability.
  • Wide operating temperature range from -55°C to 150°C suits industrial applications.
  • Meets automotive AEC-Q101 standard for high quality and durability.
  • Compact dimensions of 2.02 mm length and 1.35 mm width enable space saving designs.
  • Typical gate charge of 0.8 nC at rated gate voltage supports fast switching.
  • Designed for surface mount on printed circuit boards with 6 pins.

Product Description

The Infineon OptiMOS 2 N-Channel MOSFET, model BSD214SNH6327XTSA1, is a highly efficient semiconductor device designed for reliable switching and power management in electronic circuits. This device operates with a maximum continuous drain current of 1.5 amperes and a maximum drain-source voltage of 20 volts, ideal for low voltage switching applications.

Equipped with a surface mount 6-pin SOT-363 package, the MOSFET offers compactness for high-density circuit designs in industrial, automotive, and consumer electronics. Its low maximum drain-source resistance of 250 milliohms ensures minimal conduction losses, improving overall energy efficiency.

The device is built to operate over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments and supporting automotive-grade reliability compliant with AEC-Q101 standards. The typical gate charge is 0.8 nC at rated gate voltage, enabling fast switching performance with minimal delay.

The dimensions of 2.02 mm length, 1.35 mm width, and 1 mm height allow integration into space-constrained PCB layouts. This enhancement mode N-channel MOSFET is optimized for applications requiring efficient low voltage switching and power regulation, including industrial control systems, automotive electronics, and power supply modules.

Operates in enhancement mode for precise switching control. Surface mount SOT-363 package with 6 pins for PCB mounting. Low Rds(on) reduces conduction losses and improves efficiency. High maximum operating temperature supports harsh environment use.

AEC-Q101 automotive standard qualification ensures quality and reliability. Minimal gate charge allows rapid switching in high-frequency circuits. Compact physical dimensions lend to small form factor applications. Designed for industrial, automotive, and consumer electronic applications.

Choose this Infineon OptiMOS 2 MOSFET for durable, compact, and efficient power switching needs in advanced electronic designs. Explore more semiconductor components and high quality electronic solutions in the EnvMart offerings.

Infineon OptiMOS 2 N-Channel MOSFET 1.5 A 20 V Enhancement Mode Surface Mount SOT-363 6-Pin BSD214SNH6327XTSA1
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.5 amperes.

This MOSFET has a maximum drain-source voltage rating of 20 volts.

The maximum power dissipation for this model is 0.5 watts.

The dimensions of this model are 2.02 mm in length, 1.35 mm in width, and 1 mm in height.

The typical gate charge at rated gate voltage for this MOSFET is 0.8 nC.

The maximum operating temperature for this MOSFET is 150°C.

This model can operate at a minimum temperature of -55°C.

The package type for this MOSFET is SOT-363.

This model meets the AEC-Q101 automotive standard.

This model features a 6-pin configuration.

This device uses an N-channel configuration.

The maximum drain-source resistance for this model is 250 milliohms.

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