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Infineon CoolMOS CFDA N-Channel MOSFET, 22.4 A, 650 V Enhancement Mode, 3-Pin TO-220 Package IPP65R150CFDAAKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 41.42mm |
| Length | 16.13mm |
| Model | IPP65R150CFDAAKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS CFDA |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22.4A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 195.3W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Maximum continuous drain current of 22.4 amperes for high power applications.
- 650 V maximum drain-source voltage ensuring robustness for high voltage circuits.
- Low maximum drain-source resistance of 150 milliohms to reduce conduction losses.
- Enhancement mode channel operation with typical gate charge of 15 nanocoulombs at 15 V gate-source voltage.
- Maximum power dissipation rating of 195.3 watts for reliable thermal performance.
- Wide operating temperature range from -40°C to 150°C for harsh environments.
- Fits standard through-hole mounting in TO-220 package with 3 pins for easy PCB integration.
- Complies with automotive standard AEC-Q101, suitable for automotive and industrial uses.
Product Description
Infineon IPP65R150CFDAAKSA1 CoolMOS CFDA N-Channel MOSFET is a second-generation, high-voltage, automotive-qualified power semiconductor designed to deliver excellent efficiency and reliability for automotive, industrial, and power conversion applications. It supports a maximum continuous drain current of 22.4 A and a drain-source voltage rating of 650 V, making it ideal for high voltage power switching.
This enhancement mode MOSFET features a low drain-source resistance (150 mΩ) that reduces conduction losses and improves efficiency. The device has a typical gate charge of 15 nC at 15 V gate-source voltage, enabling fast switching and low switching losses. With a maximum power dissipation of 195.3 W, it supports robust thermal management in demanding environments.
The device package is a 3-pin TO-220, suitable for through-hole mounting, facilitating ease of use in various PCB designs. It is qualified to the automotive standard AEC-Q101, ensuring high quality and reliability needed for automotive and other industrial sectors. The MOSFET includes an integrated fast body diode, reducing voltage overshoot during switching and limiting di/dt and dv/dt.
Operating temperature range spans from -40°C to 150°C, supporting use in harsh environmental conditions often encountered in automotive and industrial applications. The mechanical dimensions are length 16.13 mm, width 5.21 mm, and height 41.42 mm.
This device is suited for power conversion, motor control, automotive power supplies, and other high power semiconductor applications where efficiency and durability are essential. Its advanced CoolMOS CFDA technology ensures low conduction and switching losses, contributing to optimized system performance.
Maximum continuous drain current: 22.4 A. Maximum drain-source voltage: 650 V. Package type: TO-220, with 3 pins. Low on-resistance: 150 milliohms. Typical gate charge: 15 nanocoulombs. Power dissipation: 195.3 watts. Operating temperature: -40°C to 150°C.
Automotive standard: AEC-Q101 qualified. Explore other Infineon power semiconductor solutions and MOSFETs in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 22.4 A, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 650 V, ensuring robustness for high voltage circuits.
It comes in a TO-220 package type with a 3-pin configuration, allowing for standard through-hole mounting.
The maximum power dissipation rating for this model is 195.3 watts, supporting reliable thermal performance.
The typical gate charge is 15 nanocoulombs at a gate-source voltage of 15 V, enabling fast switching.
It complies with the automotive standard AEC-Q101, ensuring quality and reliability for automotive applications.
The maximum drain-source resistance is 150 milliohms, which helps reduce conduction losses.
The dimensions of this model are 16.13 mm in length, 5.21 mm in width, and 41.42 mm in height.
It features an enhancement mode channel operation, which is typical for this type of MOSFET.
The maximum gate-source voltage for this model is 20 V, which is important for its operation.
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