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Infineon HEXFET N-Channel MOSFET 88 A, 100 V, 3-Pin TO-263 IRFS4410TRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRFS4410TRLPBF |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 88A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Handles a maximum continuous drain current of 88 amperes.
- Maximum drain-source voltage rating of 100 volts for robust operation.
- Features a low drain-source resistance of 10 milliohms to reduce conduction losses.
- Equipped with a 3-pin TO-263 package optimized for surface mounting.
- Typical gate charge is 180 nanocoulombs at gate-source voltage.
- Maximum power dissipation capacity of 200 watts.
- Operates reliably within a temperature range of -55°C to 175°C.
- Maximum gate-source voltage rating of 20 volts.
Product Description
The Infineon IRFS4410TRLPBF is a HEXFET N-Channel MOSFET tailored for high efficiency synchronous rectification in switched-mode power supplies (SMPS) and power management applications.
This device supports a high maximum continuous drain current of 88 A and a drain-source voltage of 100 V, delivering powerful performance in demanding electrical circuits. Its low typical on-resistance (Rds) of 10 mΩ minimizes conduction losses, enhancing energy efficiency and thermal management.
Housed in a 3-pin TO-263 surface mount package, it ensures compact installation and improved cooling via the package's thermal characteristics. With a typical gate charge of 180 nC at a specified gate-source voltage, it facilitates fast switching and reduced gate drive power consumption.
The MOSFET has a high power dissipation rating of 200 W, supporting heavy-duty use. Its wide operating temperature range from -55°C to 175°C makes it suitable for harsh environments, including industrial and automotive systems.
The maximum gate-source voltage of 20 V and a forward voltage of 1.3 V are optimized for reliability and efficient power control. This transistor complies with halogen-free standards according to IEC61249-2-21, making it environmentally friendly.
Handles a maximum continuous drain current of 88 amperes. Maximum drain-source voltage rating of 100 volts. Drain-source resistance of 10 milliohms to minimize conduction losses. Surface mount TO-263 3-pin package for ease of installation.
Typical gate charge of 180 nanocoulombs for efficient switching. High power dissipation capability of 200 watts. Operational temperature range from -55°C to 175°C. Maximum gate-source voltage of 20 volts. Forward voltage drop of 1.3 volts.
Halogen-free compliant under IEC61249-2-21 standard. This MOSFET is ideal for use in industrial, laboratory, automotive, manufacturing, and power electronics applications requiring reliable, efficient switching components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 88 amperes.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
It features a low typical on-resistance of 10 milliohms, which helps to minimize conduction losses.
The maximum power dissipation capacity is 200 watts.
It is housed in a 3-pin TO-263 surface mount package, optimized for compact installation.
The typical gate charge is 180 nanocoulombs at the specified gate-source voltage.
It operates reliably within a temperature range of -55°C to 175°C.
The maximum gate-source voltage rating is 20 volts.
The forward voltage drop is 1.3 volts.
This MOSFET is suitable for use in industrial, laboratory, automotive, manufacturing, and power electronics applications.
Yes, it is halogen-free compliant according to the IEC61249-2-21 standard.
This model features an N-channel configuration.
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