$62.45
$60.57
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 22.74mm |
| Length | 15.8mm |
| Model | NVH4L020N120SC1 |
| Width | 5.2mm |
| Mount Type | Through Hole |
| Series | NVH |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 and PPAP Capable |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 102A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 510W |
| Typical Gate Charge Qg @ Vgs | 220nC |
| Maximum Gate Source Voltage Vgs | 25V |
onsemi NVH4L020N120SC1 is a high-performance N-Channel Silicon Carbide (SiC) Power MOSFET designed to handle continuous drain currents up to 102 A and drain-source voltages up to 1200 V. This enhancement mode device is encased in a 4-Pin TO-247 package with through-hole mounting, offering robust thermal handling with a maximum power dissipation rating of 510 W.
The compact dimensions - 22.74 mm height, 15.8 mm length, and 5.2 mm width - facilitate compact PCB layouts and efficient integration in power conversion systems. The device operates reliably across a wide temperature range from -55°C to 175°C, suitable for industrial and automotive applications including onboard chargers and DC-DC converters.
Key electrical characteristics include a low maximum drain-source resistance of 28 mΩ leading to improved conduction efficiency and typical gate charge of 220 nC supporting high-speed switching. It supports a maximum gate-source voltage of ±25 V and is AEC-Q101 qualified, meeting stringent automotive quality standards and is also PPAP capable.
This MOSFET is 100% avalanche tested and has low effective output capacitance, ensuring durability and reliable performance in industrial, automotive, and power electronics applications.
Maximum continuous drain current: 102 A ensures high load capability. High voltage rating of 1200 V suitable for demanding power supply designs. Silicon Carbide technology enables higher efficiency and thermal conductivity than silicon devices.
Compact TO-247 4-pin package supports easy mounting and cooling. Wide temperature operating range from -55°C to 175°C for versatile environmental conditions. AEC-Q101 qualification ensures automotive-grade reliability. PPAP capable for production approval processes in manufacturing.
Low drain-source resistance of 28 milliohms reduces power loss. Typical gate charge of 220 nC for efficient switching operation. Ready for applications in automotive onboard chargers, DC/DC converters, and other industrial power systems.
Choose onsemi NVH4L020N120SC1 for high voltage, high current switching in challenging environments ensuring durability, efficiency, and reliability. Explore more power semiconductor solutions at EnvMart's Electronics & Electricals category.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent