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onsemi NVH N-Channel Silicon Carbide MOSFET, 102 A, 1.2 kV, Enhancement Mode, 4-Pin TO-247 NVH4L020N120SC1

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 22.74mm
Length 15.8mm
Model NVH4L020N120SC1
Width 5.2mm
Mount Type Through Hole
Series NVH
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals AEC-Q101 and PPAP Capable
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 102A
Maximum Drain Source Voltage Vds 1.2kV
Maximum Drain Source Resistance Rds 28mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 510W
Typical Gate Charge Qg @ Vgs 220nC
Maximum Gate Source Voltage Vgs 25V

Key Features

  • Offers a maximum continuous drain current of 102 A for heavy-duty performance.
  • Features a maximum drain-source voltage rating of 1.2 kV ensuring high voltage tolerance.
  • Constructed with Silicon Carbide semiconductor for enhanced efficiency and thermal performance.
  • Supported by a maximum power dissipation of 510 W suitable for demanding power electronics.
  • Compact dimensions with a height of 22.74 mm, length of 15.8 mm, and width of 5.2 mm for space-saving PCB integration.
  • Pin configuration includes 4 pins in a Through Hole TO-247 mounting package.
  • Extension range operation from -55°C to a maximum operating temperature of 175°C enables reliability in harsh environments.
  • Max gate-source voltage of 25 V to control switching effectively.

Product Description

onsemi NVH4L020N120SC1 is a high-performance N-Channel Silicon Carbide (SiC) Power MOSFET designed to handle continuous drain currents up to 102 A and drain-source voltages up to 1200 V. This enhancement mode device is encased in a 4-Pin TO-247 package with through-hole mounting, offering robust thermal handling with a maximum power dissipation rating of 510 W.

The compact dimensions - 22.74 mm height, 15.8 mm length, and 5.2 mm width - facilitate compact PCB layouts and efficient integration in power conversion systems. The device operates reliably across a wide temperature range from -55°C to 175°C, suitable for industrial and automotive applications including onboard chargers and DC-DC converters.

Key electrical characteristics include a low maximum drain-source resistance of 28 mΩ leading to improved conduction efficiency and typical gate charge of 220 nC supporting high-speed switching. It supports a maximum gate-source voltage of ±25 V and is AEC-Q101 qualified, meeting stringent automotive quality standards and is also PPAP capable.

This MOSFET is 100% avalanche tested and has low effective output capacitance, ensuring durability and reliable performance in industrial, automotive, and power electronics applications.

Maximum continuous drain current: 102 A ensures high load capability. High voltage rating of 1200 V suitable for demanding power supply designs. Silicon Carbide technology enables higher efficiency and thermal conductivity than silicon devices.

Compact TO-247 4-pin package supports easy mounting and cooling. Wide temperature operating range from -55°C to 175°C for versatile environmental conditions. AEC-Q101 qualification ensures automotive-grade reliability. PPAP capable for production approval processes in manufacturing.

Low drain-source resistance of 28 milliohms reduces power loss. Typical gate charge of 220 nC for efficient switching operation. Ready for applications in automotive onboard chargers, DC/DC converters, and other industrial power systems.

Choose onsemi NVH4L020N120SC1 for high voltage, high current switching in challenging environments ensuring durability, efficiency, and reliability. Explore more power semiconductor solutions at EnvMart's Electronics & Electricals category.

onsemi NVH N-Channel Silicon Carbide MOSFET, 102 A, 1.2 kV, Enhancement Mode, 4-Pin TO-247 NVH4L020N120SC1
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Frequently Asked Questions

The maximum continuous drain current for this model is 102 A, allowing for heavy-duty performance in power applications.

This MOSFET has a maximum drain-source voltage rating of 1.2 kV, ensuring it can handle high voltage applications effectively.

The dimensions of this model are 22.74 mm in height, 15.8 mm in length, and 5.2 mm in width, facilitating compact PCB integration.

It supports a maximum power dissipation of 510 W, making it suitable for demanding power electronics applications.

The operating temperature range for this model extends from -55°C to a maximum of 175°C, allowing reliable performance in harsh environments.

This model features a through-hole mounting type in a TO-247 package, which supports robust thermal handling.

The maximum gate-source voltage for this MOSFET is ±25 V, enabling effective control of switching operations.

This device is an N-channel MOSFET, designed for enhancement mode operation.

It is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive quality standards.

The typical gate charge for this MOSFET is 220 nC, which supports high-speed switching applications.

The maximum drain-source resistance for this model is 28 mΩ, which helps in reducing power loss during operation.

This model is suitable for applications in automotive onboard chargers, DC-DC converters, and other industrial power systems.

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