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onsemi P-Channel Enhancement MOSFET, 130 mA, 50 V, 10 Ω Rds, 225 mW Power Dissipation, 3-Pin SOT-23 BVSS84LT1G

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onsemi P-Channel Enhancement MOSFET, 130 mA, 50 V, 10 Ω Rds, 225 mW Power Dissipation, 3-Pin SOT-23 BVSS84LT1G

Name: onsemi P-Channel Enhancement MOSFET, 130 mA, 50 V, 10 Ω Rds, 225 mW Power Dissipation, 3-Pin SOT-23 BVSS84LT1G
Brand: onsemi
SKU: 319521
Price: 0.1 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	BVSS84LT1G
Width	1.4mm
Mount Type	Surface
Series	BVSS8L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	130mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	225mW
Typical Gate Charge Qg @ Vgs	2.2nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	2.2V

Key Features

Maximum continuous drain current of 130 mA ensures efficient low power operation.
Maximum drain-source voltage rating of 50 V for a wide range of applications.
Low maximum drain-source resistance of 10 Ω for superior conduction efficiency.
Maximum power dissipation capacity of 225 mW supports thermal robustness.
Compact SOT-23 surface mount package saves board space in designs.
Enhancement mode channel offers reliable switching performance.
Maximum gate-source voltage rating of ±20 V for safe gate operation.
Typical gate charge of 2.2 nC at Vgs ensures fast switching speeds.

Product Description

onsemi BVSS84LT1G is a P-Channel Enhancement MOSFET designed for low power applications requiring efficient switching and compact packaging. It features a maximum continuous drain current of 130 mA and a maximum drain-source voltage of 50 V, making it suitable for battery-powered devices, portable electronics, and automotive circuits.

The device is housed in a miniature SOT-23 surface mount package, allowing space-saving PCB layouts. Its maximum drain-source resistance of 10 Ω ensures low conduction losses, while a maximum power dissipation of 225 mW aids in thermal management during operation.

This MOSFET provides reliable performance with a wide operating temperature range from -55°C to 150°C, suitable for harsh industrial and automotive environments. The gate-source voltage is rated up to ±20 V, and the device exhibits a typical gate charge of 2.2 nC at Vgs, supporting fast switching characteristics necessary in DC-DC converters and load switching.

BVSS84LT1G conforms to automotive standard AEC-Q101 and is PPAP capable, making it appropriate for automotive electronics and other critical applications demanding high reliability. Its small physical dimensions (Length: 3.04 mm, Width: 1.4 mm, Height: 1.01 mm) facilitate usage in dense electronics assemblies.

Maximum continuous drain current: 130 mA. Maximum drain-source voltage: 50 V. Maximum drain-source resistance: 10 Ω. Maximum power dissipation: 225 mW. Surface mount SOT-23 package. Enhancement mode P-Channel MOSFET. Operating temperature range: -55°C to 150°C.

Typical gate charge: 2.2 nC at Vgs. Automotive standard AEC-Q101 qualified. PPAP capable for automotive applications.

This MOSFET is ideal for use in DC-DC converters, load switching, and power management circuits in portable and automotive devices. Its compact package and automotive certifications make it a reliable choice for industrial and automotive electronic designs.

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