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STMicroelectronics N-Channel Power MOSFET Depletion Mode 25 A 600 V TO-263 3-Pin Surface Mount STB33N60DM6

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STMicroelectronics N-Channel Power MOSFET Depletion Mode 25 A 600 V TO-263 3-Pin Surface Mount STB33N60DM6

Name: STMicroelectronics N-Channel Power MOSFET Depletion Mode 25 A 600 V TO-263 3-Pin Surface Mount STB33N60DM6
Brand: STMicroelectronics
SKU: 320776
Price: 6.22 USD
Availability: InStock

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Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	15.85mm
Length	10.4mm
Model	STB33N60DM6
Width	4.6mm
Mount Type	Surface
Series	ST
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	25A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	0.115Ω
Channel Mode	Depletion
Maximum Power Dissipation Pd	190W
Typical Gate Charge Qg @ Vgs	35nC
Maximum Gate Source Voltage Vgs	25V
Forward Voltage Vf	1.6V

Key Features

Supports maximum continuous drain current of 25 A at 600 V drain-source voltage.
Features a 3-pin TO-263 package for surface mounting.
Depletion mode channel enhances switching performance.
Maximum power dissipation is 190 W with operating temperatures from -55°C to 150°C.
Extremely low on-resistance of 0.115 Ω supports efficient conduction.
Zener-protected gate and high dv/dt ruggedness ensures reliable operation.
Typical gate charge of 35 nC at Vgs and forward voltage of 1.6 V.
Ideal for industrial, electronics, and power management applications.

Product Description

STMicroelectronics STB33N60DM6 is a specialized N-Channel Power MOSFET that operates in depletion mode, delivering a maximum continuous drain current of 25 A and withstanding drain-source voltages up to 600 V. Packaged in a 3-pin TO-263 surface mount format, the device suits high-efficiency, fast switching circuits found in industrial and power management applications.

This MOSFET belongs to the MDmesh™ DM6 series, known for combining very low recovery charge and recovery time with excellent on-resistance per unit area. The depletion mode channel and Zener-protected gate provide exceptional ruggedness against voltage spikes, while the maximum power dissipation rating of 190 W supports demanding environments.

The device's thermal operating range spans from -55°C to 150°C, ensuring durability in severe conditions. Its compact size with 15.85 mm height, 10.4 mm length, and 4.6 mm width supports convenient PCB layout without compromising performance.

Additional key features include a typical gate charge of 35 nC at Vgs and a forward voltage of 1.6 V. These values contribute to efficient switching behavior and low energy loss during operation.

This MOSFET is well-suited for industrial electronics, power supplies, motor drives, and other applications requiring high voltage and current handling with fast recovery characteristics. It is favored in construction, manufacturing, and HVAC systems for robust and reliable power switching.

Supports maximum continuous drain current of 25 A at 600 V drain-source voltage. Features a 3-pin TO-263 package for surface mounting. Depletion mode channel enhances switching performance. Maximum power dissipation is 190 W with operating temperatures from -55°C to 150°C.

Extremely low on-resistance of 0.115 Ω supports efficient conduction. Zener-protected gate and high dv/dt ruggedness ensures reliable operation. Typical gate charge of 35 nC at Vgs and forward voltage of 1.6 V. Compact dimensions: 15.85 mm height, 10.4 mm length, and 4.6 mm width.

Ideal for industrial, electronics, and power management applications. Explore the Electronics & Electricals category at EnvMart for a wide range of reliable MOSFETs and semiconductor solutions.