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STMicroelectronics N-Channel IGBT, 40 A Continuous Collector Current, 650 V Collector Emitter Voltage, 238 W STGWA40IH65DF
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 5.1mm |
| Length | 15.9mm |
| Model | STGWA40IH65DF |
| Width | 21.1mm |
| Mount Type | Through Hole |
| Series | STG |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 238W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- This IGBT supports a maximum power dissipation of 238 W for efficient thermal management.
- The device features a 3-pin through hole mount TO-247 package for easy PCB integration.
- Maximum gate emitter voltage rating is 20 V ensuring robust control interface.
- Operating temperature range extends from -55°C to 175°C for diverse industrial applications.
- Maximum collector emitter saturation voltage is 2 V, supporting low conduction losses.
- Compact dimensions of 21.1 mm width, 15.9 mm length, and 5.1 mm height facilitate space-efficient designs.
- RoHS compliant ensuring environmental friendliness and manufacturing quality.
- Optimized trench gate field-stop structure reduces conduction and switching losses for improved efficiency.
Product Description
STMicroelectronics STGWA40IH65DF is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for applications demanding robust switching and conduction capabilities. This device supports a maximum continuous collector current of 40 A and a collector emitter voltage of 650 V, making it ideal for power management in industrial, automotive, and electronic systems.
The device is housed in a 3-pin TO-247 through hole package, facilitating straightforward mounting on printed circuit boards. With a maximum power dissipation of 238 W, it efficiently manages thermal loads during operation. Operating temperatures range from -55°C to 175°C, enabling deployment in harsh environmental conditions.
Featuring an advanced proprietary trench gate field-stop structure, the STGWA40IH65DF minimizes conduction and switching losses, enhancing soft commutation performance. The maximum gate emitter voltage of 20 V provides reliable gate control, while the maximum collector emitter saturation voltage of 2 V ensures low conduction losses for energy efficiency.
Its compact physical dimensions - 15.9 mm length, 21.1 mm width, and 5.1 mm height - enable space-saving designs in power electronics modules. This product is RoHS compliant, emphasizing adherence to environmental standards and manufacturing quality.
Common industrial applications include power supplies, motor drives, inverters, and automotive electronics where durability, efficiency, and performance are critical. The positive VCE(sat) temperature coefficient enhances thermal stability during operation, reducing the risk of thermal runaway.
This IGBT is suitable for industrial, automotive, and electronic power control applications. The package supports through-hole mounting for reliable PCB attachment. Operating temperature range supports extreme environmental conditions.
Enhanced trench gate structure reduces switching losses and improves efficiency. Compact size enables integration into constrained circuit layouts. RoHS compliance guarantees environmentally safe manufacturing.
Choose STMicroelectronics for reliable and efficient power semiconductor components. Browse our comprehensive selection of IGBTs and electronic components for your industrial and electronic needs on EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for the STGWA40IH65DF is 40 A.
This model has a collector emitter voltage rating of 650 V.
The device supports a maximum power dissipation of 238 W.
The operating temperature range extends from -55°C to 175°C.
The maximum gate emitter voltage rating for this model is 20 V.
It is housed in a 3-pin TO-247 through hole package for easy PCB integration.
The dimensions are 15.9 mm in length, 21.1 mm in width, and 5.1 mm in height.
The maximum collector emitter saturation voltage is 2 V.
Yes, the STGWA40IH65DF is RoHS compliant, ensuring adherence to environmental standards.
This IGBT is suitable for power supplies, motor drives, inverters, and automotive electronics.
The advanced trench gate field-stop structure reduces conduction and switching losses, enhancing efficiency.
This model has a pin count of 3.
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