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onsemi Switching Diode Silicon Junction Series 3-Pin Surface Mount SOT-23 Package 7 V 300 mW MMBD352LT1G

Category Switching Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBD352LT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Standards/Approvals RoHS, Pb-Free
Pin Count 3
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Diode Configuration Series
Maximum Forward Voltage Vf 600mV
Maximum Peak Reverse Repetitive Voltage Vrrm 7V

Key Features

  • This diode features a maximum power dissipation of 300 mW.
  • It has a maximum forward voltage of 600 mV, suitable for switching and RF applications.
  • The device operates in a temperature range from -55°C to 150°C.
  • Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height enable easy integration on PCBs.
  • Qualified to AEC-Q101 automotive standard, meeting reliability requirements.
  • RoHS and Pb-Free compliant, supporting environmentally friendly designs.

Product Description

The onsemi MMBD352LT1G switching diode is a silicon junction diode designed for high-frequency switching and radio frequency (RF) applications in electronic circuit designs. Packaged in a compact 3-pin SOT-23 surface-mount configuration, it allows for optimized PCB layout efficiency and smaller form factors.

This diode supports operations across a wide temperature range from -55°C to 150°C, making it suitable for automotive and industrial applications with varying thermal environments. The maximum peak reverse repetitive voltage of 7 V and maximum power dissipation of 300 mW ensure reliable performance under demanding conditions.

Its maximum forward voltage of 600 mV allows fast switching with low signal loss, ideal for RF band mixing, detection, and high-frequency operations in telecommunications and control systems.

The device's physical footprint (3.04 mm length × 1.4 mm width × 1.11 mm height) enables compact circuit design while maintaining thermal dissipation requirements. Compliance with RoHS and Pb-Free standards aligns with global environmental regulations.

Certified to the AEC-Q101 automotive standard, the MMBD352LT1G diode meets stringent automotive quality demands, making it reliable for in-vehicle electronics and sensor systems. This diode features a maximum power dissipation of 300 mW.

Compact 3-pin SOT-23 surface mount package. Operating temperature range from -55°C to 150°C. Maximum forward voltage of 600 mV for efficient switching. Conforms to RoHS and automotive AEC-Q101 standards.

This diode is a versatile component for industrial, automotive, telecommunications, and general electronic applications requiring reliable high-frequency switching performance. Explore more semiconductor products and Switching Diodes at EnvMart for your design and manufacturing needs.

onsemi Switching Diode Silicon Junction Series 3-Pin Surface Mount SOT-23 Package 7 V 300 mW MMBD352LT1G
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Frequently Asked Questions

The maximum power dissipation of this diode is 300 mW.

It operates within a temperature range from -55°C to 150°C.

The maximum forward voltage is 600 mV, allowing for efficient switching.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

Yes, it is RoHS and Pb-Free compliant, supporting environmentally friendly designs.

It is qualified to the AEC-Q101 automotive standard, ensuring reliability for automotive applications.

The maximum peak reverse repetitive voltage is 7 V.

This model uses a surface mount configuration.

It is suitable for high-frequency switching and RF applications in electronic circuit designs.

This diode features a 3-pin configuration.

It is a silicon junction diode designed for switching applications.

The diode is configured in series.

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