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Vishay TrenchFET Gen IV N-Channel MOSFET 40 V 100 A SO-8 Package SIDR638DP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 610μm |
| Length | 6.15mm |
| Model | SIDR638DP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | TrenchFET Gen IV |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.16mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 204nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Operates with enhancement channel mode for efficient switching.
- Has a low maximum drain-source resistance of 1.16 mΩ for reduced power loss.
- Supports high power dissipation up to 125 W ensuring robust performance.
- Runs reliably in extreme temperatures from -55°C to 175°C.
- Features an 8-pin SO-8 surface mount package with compact dimensions.
- Possesses a typical gate charge of 204 nC at Vgs for precise control.
- Maximum gate-source voltage is 20 V for stable operation.
- Forward voltage of 1.1 V allows efficient conduction.
Product Description
Vishay SIDR638DP-T1-RE3 is a high-performance TrenchFET Gen IV N-Channel MOSFET designed for power electronics applications requiring high current conduction up to 100 A and voltage rating of 40 V. Packaged in a standard 8-pin SO-8 surface mount design, this device is engineered for enhanced switching efficiency and thermal management.
The device operates in enhancement mode, delivering very low on-resistance (Rds) of 1.16 mΩ at rated conditions which minimizes conduction losses. The typical gate charge of 204 nC at Vgs enables precise gate control for fast switching applications. Its maximum power dissipation of 125 W allows it to perform reliably in power dense circuits.
Operating temperature range spans from -55°C to 175°C, making it suitable for harsh environments in industrial, automotive, and consumer electronics sectors. The forward voltage of 1.1 V ensures efficient conduction with minimal voltage drop, boosting overall circuit efficiency.
TrenchFET Gen IV technology incorporates a top side cooling feature that provides an additional venue for thermal transfer, enhancing reliability and device lifespan. It is fully tested for gate resistance and unclamped inductive switching (UIS), assuring robust performance under transient conditions.
This MOSFET is ideal for use in power management, motor control, DC-DC converters, and other high current switching applications within industrial electronics, automotive electronics, and power supplies.
Operates with enhancement channel mode for efficient switching. Has a low maximum drain-source resistance of 1.16 mΩ for reduced power loss. Supports high power dissipation up to 125 W ensuring robust performance. Runs reliably in extreme temperatures from -55°C to 175°C.
Features an 8-pin SO-8 surface mount package with compact dimensions of 6.15 mm length, 5.15 mm width, and 610 μm height. Possesses a typical gate charge of 204 nC at Vgs for precise control. Maximum gate-source voltage is 20 V for stable operation.
Forward voltage of 1.1 V allows efficient conduction. TrenchFET Gen IV technology enhances thermal management and device reliability. Top side cooling further supports thermal dissipation in demanding applications. Explore the Vishay product range on EnvMart for reliable power semiconductor solutions optimized for advanced electronics and power management designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It comes in an 8-pin SO-8 surface mount package with dimensions of 6.15 mm in length, 5.15 mm in width, and a height of 610 μm.
The maximum power dissipation for this unit is 125 W.
The typical gate charge at Vgs for this MOSFET is 204 nC.
The maximum gate-source voltage for this model is 20 V.
It operates reliably in temperatures ranging from -55°C to 175°C.
The maximum drain-source resistance is 1.16 mΩ, which helps in reducing power loss.
This device uses an enhancement channel type for efficient switching.
It is suitable for power management, motor control, DC-DC converters, and other high current switching applications.
It utilizes TrenchFET Gen IV technology, which includes a top side cooling feature to enhance thermal dissipation.
The country of origin for this model is India.
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