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Vishay Single N-Channel MOSFET, 4.3 A Continuous Drain Current, 100 V Drain Source Voltage, 25 W Power Dissipation IRLR110PBF

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Vishay Single N-Channel MOSFET, 4.3 A Continuous Drain Current, 100 V Drain Source Voltage, 25 W Power Dissipation IRLR110PBF

Name: Vishay Single N-Channel MOSFET, 4.3 A Continuous Drain Current, 100 V Drain Source Voltage, 25 W Power Dissipation IRLR110PBF
Brand: Vishay
SKU: 319328
Price: 0.42 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Length	9.65mm
Model	IRLR110PBF
Width	6.73mm
Mount Type	Surface, Through Hole
Maximum Operating Temperature	150°C
Minimum Operating Temperature	-55°C
Pin Count	3
Number of Elements per Chip	1
Channel Type	N
Maximum Continuous Drain Current Id	4.3A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	0.54Ω
Maximum Power Dissipation Pd	25W
Typical Gate Charge Qg @ Vgs	6.1nC
Maximum Gate Source Voltage Vgs	10V
Transistor Configuration	Single

Key Features

This MOSFET has a low maximum drain-source resistance of 0.54 ohms at VGS = 5 V.
Mount types supported include surface mount and through hole with 3 pins for easy PCB integration.
Operating temperature ranges from -55°C to 150°C, suitable for demanding environments.
Features logic-level gate drive, dynamic dV/dt rating, and halogen and lead-free construction.
Typical gate charge is 6.1 nC at VGS, enabling efficient switching performance.
Designed for applications such as battery chargers, inverters, power supplies, and switching mode power supplies.
Meets IEC 61249-2-21 and RoHS 2002/95/EC standards for compliance and safety.
Package size measures 9.65 mm length and 6.73 mm width, in a TO-252-3 form factor.

Product Description

Vishay IRLR110PBF is a high-performance single N-channel MOSFET designed for industrial and electronic applications that require efficient power switching. It supports a maximum continuous drain current of 4.3 A and can withstand drain-source voltages up to 100 V, making it suitable for mid-power circuits.

This MOSFET has a low on-resistance of 0.54 ohms at a gate-source voltage of 5 V, improving conduction efficiency and minimizing power loss. It is packaged in a TO-252-3 form factor with three pins, supporting surface mount and through-hole PCB mounting options.

Operating temperature ratings from -55°C to 150°C enable operation in harsh environments without compromising reliability. The device features a maximum power dissipation of 25 W, optimized to ensure sustained durability during continuous use.

Other key features include dynamic dV/dt capability, logic-level gate drive for easy interfacing with control logic, and halogen and lead-free materials for environmental compliance. The typical gate charge at VGS is 6.1 nC, facilitating fast switching speeds for power management applications.

Typical applications for the Vishay IRLR110PBF MOSFET include battery chargers, power inverters, power supplies, and switching mode power supplies (SMPS) widely used in industrial, consumer electronics, and automotive sectors.

This product complies with IEC 61249-2-21 and RoHS 2002/95/EC standards, assuring quality and environmental safety. Package dimensions are compact, with a length of 9.65 mm and width of 6.73 mm, allowing flexibility in PCB design.

Manufactured in China, this Vishay MOSFET offers reliable performance for varied electronic and power applications. Explore more Vishay semiconductor components in the EnvMart Electronics & Electricals category.