$0.58
$0.56
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Taiwan Semiconductor N-Channel Enhancement Mode MOSFET, 80 A, 30 V, 54 W Power Dissipation, 4-Pin TO-252 TSM060N03CP ROG
Specifications
| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | TSM060N03CP ROG |
| Width | 5.8mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | IEC 61249 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 54W |
| Typical Gate Charge Qg @ Vgs | 11.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Maximum continuous drain current of 80 A ensures high load handling capability.
- Supports maximum drain-source voltage of 30 V for robust performance.
- Enhanced channel mode with 4-pin TO-252 surface mount package for easy integration.
- Low on-resistance of 9 milliohms reduces power loss and heat generation.
- Maximum power dissipation rated at 54 W to withstand heavy loads.
- Operating temperature range from -55°C to 150°C for extreme environment durability.
- Typical gate charge of 11.1 nC enables fast switching speeds.
- Maximum gate-source voltage of 20 V enhances control precision and reliability.
Product Description
Taiwan Semiconductor TSM060N03CP ROG is an N-Channel enhancement mode MOSFET designed to deliver superior performance in power management and switching applications. It supports a maximum continuous drain current of 80 A with a drain-source voltage rating of 30 V, making it suitable for high current electronic circuits.
This MOSFET package is a 4-pin surface mount type TO-252, optimized for ease of PCB assembly and efficient heat dissipation. The device features a low on-resistance of 9 milliohms which reduces conduction losses and improves efficiency.
Operating temperature ranges from -55°C up to a maximum of 150°C allow for usage in demanding industrial and automotive environments. The typical gate charge of 11.1 nC supports fast switching speeds, enhancing overall circuit performance.
Maximum power dissipation is rated at 54 W, ensuring robust thermal capacity under heavy load conditions. The device can withstand a maximum gate-source voltage of 20 V, providing reliable control voltage margins. The compact physical dimensions (6.5 mm length, 5.8 mm width, 2.3 mm height) facilitate applications in space-constrained designs.
Compliance with the IEC 61249 automotive standard assures the MOSFET meets rigorous quality and safety criteria for automotive applications. This product is ideal for industrial, automotive, and general electronic applications requiring efficient power switching and control.
Maximum continuous drain current of 80 A. Drain-source voltage rating of 30 V. 4-pin TO-252 surface mount package. Low drain-source resistance of 9 mΩ. Power dissipation capability up to 54 W. Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 11.1 nC for fast switching. Maximum gate-source voltage of 20 V. Compliant with IEC 61249 automotive standards. Compact physical dimensions for versatile use. Explore more power semiconductor devices and MOSFETs in the Electronics & Electricals category at EnvMart for your efficient industrial and automotive designs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of the TSM060N03CP ROG is 80 A, allowing it to handle high load conditions effectively.
This model supports a maximum drain-source voltage of 30 V, providing robust performance for various applications.
It has a maximum power dissipation capability of 54 W, ensuring it can withstand heavy load conditions without overheating.
The on-resistance of this MOSFET is 9 milliohms, which helps reduce conduction losses and improve overall efficiency.
The physical dimensions of the TO-252 package are 6.5 mm in length, 5.8 mm in width, and 2.3 mm in height, making it suitable for space-constrained designs.
The typical gate charge is 11.1 nC, which supports fast switching speeds in electronic circuits.
This MOSFET operates within a temperature range of -55°C to 150°C, allowing for use in demanding environments.
The maximum gate-source voltage for this model is 20 V, which enhances control precision and reliability.
Yes, it is compliant with the IEC 61249 automotive standard, ensuring it meets rigorous quality and safety criteria for automotive applications.
This model features an N-channel enhancement mode, which is designed for efficient power management and switching applications.
The TO-252 package of this MOSFET has 4 pins, facilitating easy integration into electronic circuits.
This MOSFET uses a surface mount type for easy PCB assembly and efficient heat dissipation.
Related Products
Other Products from this brand
$0.58
$0.56
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent