$2.12
$2.06
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay P-Channel MOSFET 50 A, 60 V Enhancement Mode, TO-252 Surface Mount, 3-Pin SUD50P06-15-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | SUD50P06-15-GE3 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | SUD50P06-15 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 113W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.6V |
Key Features
- Designed for enhancement mode operation providing reliable switching performance.
- Maximum drain-source resistance of 28 milliohms ensuring efficient conduction.
- Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height.
- Operates reliably from -55°C up to 150°C operating temperature range.
- Typical gate charge of 110 nC at Vgs of 10 V for low switching losses.
- Maximum power dissipation rating of 113 W supports high power applications.
- Surface mount TO-252 package allows for easy PCB integration.
- Maximum gate-source voltage of 20 V enhances device robustness.
Product Description
Vishay SUD50P06-15-GE3 is a Type P-Channel enhancement mode MOSFET designed for high-performance switching applications. It features a maximum continuous drain current of 50 A and voltage rating of 60 V, housed in a compact TO-252 surface mount package with 3 pins. The device is engineered to operate efficiently within a wide temperature range from -55°C to 150°C, making it suitable for diverse industrial, commercial, and electronic component applications.
This MOSFET offers a low maximum drain-source resistance of 28 milliohms to minimize conduction losses. Its typical gate charge is 110 nC at a gate-source voltage of 10 V, reducing switching losses and improving overall efficiency. The maximum power dissipation of 113 watts accommodates demanding power conditions. The package size of 6.73 mm length, 6.22 mm width, and 2.38 mm height ensures compatibility with compact PCB designs.
Designed primarily for surface mount technology, this device does not comply with automotive standards but is well suited for laboratory equipment, consumer electronics, industrial controls, power management circuits, telecommunications, and other general purpose industrial uses.
The Vishay SUD50P06-15-GE3 MOSFET supports a maximum gate-source voltage of ±20 V for reliable operation under varying signal conditions. Its rugged trenchFET construction enhances performance and reliability. This discrete semiconductor is ideal for engineers and technicians seeking a robust, efficient P-channel MOSFET component.
Enhancement mode Type P-Channel MOSFET with 50 A continuous current. Maximum drain-source voltage of 60 V for medium voltage applications. Low on-resistance of 28 milliohms reduces power loss. Operates efficiently across a wide -55°C to 150°C temperature range.
Compact TO-252 3-pin package for surface mount PCB assembly. Typical gate charge of 110 nC supports high-speed switching. Maximum power dissipation of 113 W for heavy load handling. Maximum gate-source voltage rating of 20 V to ensure device robustness.
Explore our Electronics & Electricals category on EnvMart for more Vishay MOSFETs and discrete semiconductor components to meet your project requirements.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 50 A.
It has a maximum drain-source voltage rating of 60 V.
The maximum power dissipation rating is 113 W, allowing it to handle heavy loads.
The typical gate charge at a gate-source voltage of 10 V is 110 nC.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
This model operates reliably within a temperature range of -55°C to 150°C.
It supports surface mount technology, specifically in a TO-252 package.
The maximum gate-source voltage is ±20 V, enhancing the device's robustness.
The maximum drain-source resistance is 28 milliohms, which helps minimize conduction losses.
This device is suitable for laboratory equipment, consumer electronics, industrial controls, and power management circuits.
This model is a Type P-Channel enhancement mode MOSFET.
The TO-252 package has 3 pins.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$2.12
$2.06
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent