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Infineon OptiMOS 5 N-Channel MOSFET 100 A 60 V Enhancement 8-Pin TDSON BSC016N06NSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6mm |
| Model | BSC016N06NSATMA1 |
| Width | 5mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 139W |
| Typical Gate Charge Qg @ Vgs | 71nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features OptiMOS 5 series surface mount technology for efficient power handling.
- Maximum power dissipation rating of 139 W for high-temperature operation.
- Low on-resistance of 2.4 milliohms minimizes energy loss during switching.
- Typical gate charge of 71 nC at Vgs, facilitating fast switching performance.
- Operates within a temperature range of -55°C to 150°C providing versatility.
- Enhancement mode channel type ensures reliable transistor operation.
- Maximum gate-source voltage rating of ±20 V for enhanced durability.
Product Description
Infineon BSC016N06NSATMA1 OptiMOS 5 N-Channel MOSFET is engineered for high efficiency and power density in electronic circuits. With a maximum continuous drain current of 100 A and a voltage rating of 60 V, this MOSFET suits demanding industrial, automotive, and power management applications.
Featuring an 8-pin TDSON surface mount package, the device provides minimal on-resistance of 2.4 milliohms, enabling lower conduction losses and improved thermal performance. Its typical gate charge of 71 nC at gate-source voltage enhances switching speed and efficiency.
The MOSFET supports a wide operating temperature range from -55°C to 150°C, making it robust for harsh environments and automotive standards, although this particular model is not AEC-Q101 automotive qualified.
Compact physical dimensions of 6 mm length, 5 mm width, and 1.1 mm height make it suitable for high-density PCB designs. The maximum power dissipation capability is rated at 139 W, supporting effective heat management in power circuits.
This enhancement-mode device has a forward voltage drop of 1.2 V and gate-source voltage tolerance of ±20 V, designed to provide reliable switching and protection functionality in power control systems.
Features OptiMOS 5 series surface mount technology for efficient power handling. Maximum power dissipation rating of 139 W supports thermal reliability. Low resistance minimizes energy loss during operation. Wide temperature range ensures adaptability.
Compact dimensions fit in dense PCB layouts. Robust gate-source voltage tolerance for enhanced durability. High continuous drain current capacity for demanding power applications.
Widely used in industrial power management, automotive electronics, and energy-efficient systems, the Infineon OptiMOS 5 BSC016N06NSATMA1 MOSFET offers optimized performance and reliability. Explore related MOSFETs in the Infineon OptiMOS family to meet diverse power switching and control needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 100 A, making it suitable for demanding power applications.
This MOSFET has a maximum drain-source voltage rating of 60 V, allowing it to handle significant voltage levels in power management applications.
The on-resistance of this unit is 2.4 milliohms, which helps minimize energy loss during operation.
The typical gate charge at gate-source voltage is 71 nC, facilitating fast switching performance.
It operates within a temperature range of -55°C to 150°C, providing versatility for various applications.
The dimensions of this model are 6 mm in length, 5 mm in width, and 1.1 mm in height, making it suitable for high-density PCB designs.
The maximum power dissipation rating is 139 W, supporting effective heat management in power circuits.
This model uses an 8-pin TDSON surface mount package, which is designed for efficient power handling.
The maximum gate-source voltage rating is ±20 V, enhancing its durability in various applications.
It is widely used in industrial power management, automotive electronics, and energy-efficient systems.
This model features an enhancement mode N-channel, ensuring reliable transistor operation.
The forward voltage drop of this unit is 1.2 V, which is important for its performance in power control systems.
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