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Infineon OptiMOS 5 N-Channel MOSFET 45 A, 60 V, Enhancement Mode, 3-Pin TO-252 IPD053N06NATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 2.41mm
Length 6.73mm
Model IPD053N06NATMA1
Width 6.22mm
Mount Type Surface
Series OptiMOS 5
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 45A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 8mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 83W
Typical Gate Charge Qg @ Vgs 27nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Supports a maximum continuous drain current of 45 A for demanding power applications.
  • Maximum drain source voltage rating of 60 V ensures reliable operation under moderate voltage conditions.
  • Enhancement mode operation with low on-resistance improves efficiency in switching circuits.
  • Typical gate charge of 27 nC enables fast switching transitions for improved performance.
  • Maximum power dissipation up to 83 W allows high-power handling with adequate thermal management.
  • Wide operating temperature range from -55°C to 175°C for versatile thermal environments.
  • Compact 3-pin TO-252 surface-mount package facilitates space-saving PCB layouts.
  • Forward voltage of 1.2 V typical assists in accurate conduction loss calculations.

Product Description

Infineon IPD053N06NATMA1 is an OptiMOS 5 series N-Channel MOSFET specifically engineered for high-current switching in surface-mount power assemblies. This device supports a continuous drain current of 45 A and voltage rating of 60 V, making it ideal for applications requiring low conduction losses and quick switching capabilities.

The enhancement mode MOSFET offers an on-resistance of 8 mΩ, contributing to better efficiency and reduced power dissipation. Its typical gate charge of 27 nC allows for rapid switching, suitable for synchronous buck converters, three-phase motor inverter half-bridges, battery management systems, and DC-DC conversion in telecom equipment.

Designed to operate in ambient temperatures ranging from -55°C to 175°C and capable of dissipating up to 83 W, the device demands appropriate heatsinking and PCB thermal design to maintain reliability during continuous operation. The TO-252 package with three pins provides a compact form factor facilitating optimized PCB layout and thermal management via copper planes and thermal vias.

The maximum gate source voltage tolerance of -20 V to +20 V accommodates a variety of gate driving schemes, while the forward voltage of approximately 1.2 V is critical for conduction loss and voltage drop calculations under high current conditions. This MOSFET does not include automotive certifications but is well suited for industrial, HVAC, telecommunications, and manufacturing applications.

Supports maximum continuous drain current of 45 A. Maximum drain-source voltage of 60 V. Low on-resistance of 8 mΩ reduces conduction losses. Typical gate charge of 27 nC enables fast switching performance. Maximum power dissipation rated at 83 W.

Wide operating temperature range from -55°C to 175°C. Compact 3-pin TO-252 surface-mount package. Gate voltage tolerance supports common drive voltages from -20 V to +20 V. Forward voltage approximately 1.2 V used for conduction calculations.

Infineon OptiMOS 5 MOSFETs are widely used in industrial, telecommunications, and power management systems. Explore more products under the Infineon brand and MOSFET category on EnvMart for matching components and related electronics solutions.

Infineon OptiMOS 5 N-Channel MOSFET 45 A, 60 V, Enhancement Mode, 3-Pin TO-252 IPD053N06NATMA1
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Frequently Asked Questions

The Infineon OptiMOS 5 N-Channel MOSFET supports a maximum continuous drain current of 45 A.

This model has a maximum drain-source voltage rating of 60 V, ensuring reliable operation under moderate voltage conditions.

The on-resistance of this N-Channel MOSFET is 8 mΩ, which helps reduce conduction losses.

It has a typical gate charge of 27 nC, enabling fast switching transitions for improved performance.

The maximum power dissipation rated for this MOSFET is up to 83 W, allowing for high-power handling with adequate thermal management.

It operates within a wide temperature range from -55°C to 175°C, making it suitable for various thermal environments.

This model comes in a compact 3-pin TO-252 surface-mount package, facilitating space-saving PCB layouts.

The maximum gate-source voltage tolerance for this device is -20 V to +20 V, accommodating various gate driving schemes.

The forward voltage is approximately 1.2 V, which is critical for conduction loss and voltage drop calculations under high current conditions.

The dimensions of this model are 6.73 mm in length, 6.22 mm in width, and 2.41 mm in height.

This device is well-suited for applications such as synchronous buck converters, three-phase motor inverter half-bridges, battery management systems, and DC-DC conversion in telecom equipment.

This model features an N-channel type, designed for enhancement mode operation.

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