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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD053N06NATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 45A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 83W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Infineon IPD053N06NATMA1 is an OptiMOS 5 series N-Channel MOSFET specifically engineered for high-current switching in surface-mount power assemblies. This device supports a continuous drain current of 45 A and voltage rating of 60 V, making it ideal for applications requiring low conduction losses and quick switching capabilities.
The enhancement mode MOSFET offers an on-resistance of 8 mΩ, contributing to better efficiency and reduced power dissipation. Its typical gate charge of 27 nC allows for rapid switching, suitable for synchronous buck converters, three-phase motor inverter half-bridges, battery management systems, and DC-DC conversion in telecom equipment.
Designed to operate in ambient temperatures ranging from -55°C to 175°C and capable of dissipating up to 83 W, the device demands appropriate heatsinking and PCB thermal design to maintain reliability during continuous operation. The TO-252 package with three pins provides a compact form factor facilitating optimized PCB layout and thermal management via copper planes and thermal vias.
The maximum gate source voltage tolerance of -20 V to +20 V accommodates a variety of gate driving schemes, while the forward voltage of approximately 1.2 V is critical for conduction loss and voltage drop calculations under high current conditions. This MOSFET does not include automotive certifications but is well suited for industrial, HVAC, telecommunications, and manufacturing applications.
Supports maximum continuous drain current of 45 A. Maximum drain-source voltage of 60 V. Low on-resistance of 8 mΩ reduces conduction losses. Typical gate charge of 27 nC enables fast switching performance. Maximum power dissipation rated at 83 W.
Wide operating temperature range from -55°C to 175°C. Compact 3-pin TO-252 surface-mount package. Gate voltage tolerance supports common drive voltages from -20 V to +20 V. Forward voltage approximately 1.2 V used for conduction calculations.
Infineon OptiMOS 5 MOSFETs are widely used in industrial, telecommunications, and power management systems. Explore more products under the Infineon brand and MOSFET category on EnvMart for matching components and related electronics solutions.
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