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Infineon OptiMOS 5 N-Channel MOSFET, 100 A Maximum Continuous Drain Current, 60 V Maximum Drain Source BSC039N06NSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 6.1mm |
| Model | BSC039N06NSATMA1 |
| Width | 5.35mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhancement mode N-channel configuration for efficient switching.
- Very low 5.9 mΩ on-resistance minimizes conduction losses.
- Low gate charge of 27 nC for faster switching and reduced drive energy.
- Maximum power dissipation of 69 W supports sustained thermal loads.
- Operating temperature range from -55 °C to 150 °C for harsh environments.
- Surface mount design compatible with standard PCB assembly processes.
- Forward voltage of 1.2 V enables efficient conduction.
- Maximum gate-source voltage ±20 V protects device integrity.
Product Description
Infineon BSC039N06NSATMA1 is an OptiMOS 5 Series N-Channel MOSFET designed for high-current power applications needing robust conduction and switching efficiency. It features a maximum continuous drain current of 100 A and a drain-source voltage rating of 60 V, making it suitable for demanding electronics such as power supplies, motor drives, and DC-DC converters.
This device utilizes an enhancement-mode N-channel configuration, requiring a positive gate-source drive for conduction, supporting both low-side and high-side switching topologies. Its very low on-resistance of 5.9 mΩ substantially reduces conduction losses, improving system efficiency.
The MOSFET offers a maximum power dissipation of 69 W, allowing operation under sustained thermal stress, and can function reliably in a wide temperature range from -55 °C to 150 °C, suited for harsh industrial and automotive environments.
Packaged in an 8-pin TDSON surface-mount package, it supports modern solder reflow assembly with compact footprint dimensions of 6.1 mm length, 5.35 mm width, and 1.1 mm height. The low typical gate charge of 27 nC facilitates fast switching speeds with reduced gate drive power.
Applications include synchronous buck converters in power supplies, high continuous current motor drive stages, telecommunications DC-DC converters, and power distribution in servers and data centers. Its robust electrical specifications and compact package make it ideal for industrial switching and power management assemblies.
Enhancement mode N-channel MOSFET for switching applications. 100 A continuous drain current rating supports heavy loads. 60 V maximum drain-source voltage ensuring voltage headroom. Low on-resistance of 5.9 mΩ reduces conduction losses.
Maximum power dissipation of 69 W sustains thermal loading. Wide operating temperature range from -55 °C to 150 °C. 8-Pin TDSON package designed for surface mount technology. Typical gate charge of 27 nC enables fast switching.
Explore this and other semiconductor components in the MOSFET category at EnvMart, suited for electronic design and industrial manufacturing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
It features a very low on-resistance of 5.9 mΩ, which minimizes conduction losses.
The typical gate charge is 27 nC, facilitating faster switching speeds.
The maximum power dissipation is 69 W, allowing it to handle sustained thermal loads.
It operates within a temperature range of -55 °C to 150 °C, suitable for harsh environments.
It is packaged in an 8-pin TDSON surface-mount package, compatible with standard PCB assembly processes.
The maximum gate-source voltage is ±20 V, which protects the device integrity.
This MOSFET is suitable for applications such as synchronous buck converters, motor drives, and DC-DC converters.
It is an enhancement mode N-channel MOSFET, requiring a positive gate-source drive for conduction.
The dimensions are 6.1 mm in length, 5.35 mm in width, and 1.1 mm in height.
The forward voltage is 1.2 V, enabling efficient conduction.
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