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Toshiba DTMOSIV N-Channel MOSFET, 39 A, 600 V Enhancement Mode, 3-Pin TO-3PN TK39J60W5,S1VQ(O
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 20mm |
| Length | 15.5mm |
| Model | TK39J60W5,S1VQ(O |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PN |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 74mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 270W |
| Typical Gate Charge Qg @ Vgs | 135nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Maximum continuous drain current of 39 A supports demanding power management needs.
- Drain-source voltage rating of 600 V provides high voltage tolerance.
- Enhancement mode channel offers controlled switching characteristics.
- Low drain-source resistance of 74 milliohms ensures efficient conduction.
- Maximum power dissipation rated at 270 W for robust thermal performance.
- Typical gate charge of 135 nanocoulombs at Vgs enables fast switching.
- Wide gate-source voltage range of -30 V to +30 V ensures flexible driving conditions.
- Operates safely up to 150°C allowing use in demanding environments.
Product Description
Toshiba TK39J60W5,S1VQ(O is a high-performance N-Channel enhancement mode MOSFET transistor designed for power electronic applications requiring high current and voltage handling capability. It is packaged in a durable 3-pin TO-3PN form factor suitable for through-hole mounting.
This MOSFET features a maximum continuous drain current of 39 amperes and a drain-source voltage rating of 600 volts, making it ideal for industrial, automotive, and power management applications. Its low drain-source resistance of 74 milliohms reduces conduction losses, enhancing overall system efficiency.
The device supports a maximum power dissipation of 270 watts and operates reliably in temperatures up to 150 degrees Celsius, validating its suitability for harsh environments. The typical gate charge of 135 nanocoulombs at the specified gate voltage facilitates fast switching speeds, optimizing performance in switching circuits.
The gate-source voltage rating ranges from -30 to +30 volts, allowing versatile drive voltages without compromising the device integrity. Mechanical dimensions are compact with a height of 20 mm, length of 15.5 mm, and width of 4.5 mm, enabling integration into varied PCB layouts.
Applications for this MOSFET include power supplies, motor drives, switching regulators, and other electronics requiring efficient high-voltage switching. It is part of Toshiba's DTMOSIV series known for reliable semiconductor components.
Maximum continuous drain current: 39 A. Maximum drain-source voltage: 600 V. Enhancement mode channel. Drain-source resistance: 74 mΩ. Power dissipation: 270 W. Typical gate charge: 135 nC. Gate-source voltage range: -30 to +30 V.
Operating temperature max: 150°C. Package: 3-Pin TO-3PN through hole. Height: 20 mm, Length: 15.5 mm, Width: 4.5 mm. This MOSFET is manufactured in Japan, assuring high standards of quality and performance. Ideal for industrial, automotive, and power electronics applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 39 A.
It has a drain-source voltage rating of 600 V, providing high voltage tolerance for various applications.
The drain-source resistance is 74 milliohms, which helps reduce conduction losses.
This MOSFET can dissipate a maximum power of 270 W, ensuring robust thermal performance.
The typical gate charge at the specified gate voltage is 135 nanocoulombs.
It supports a wide gate-source voltage range of -30 V to +30 V, allowing for flexible driving conditions.
The dimensions are 20 mm in height, 15.5 mm in length, and 4.5 mm in width.
The maximum operating temperature is 150°C, making it suitable for demanding environments.
It is designed for through-hole mounting with a 3-pin TO-3PN package type.
This MOSFET is suitable for applications such as power supplies, motor drives, and switching regulators.
It is part of Toshiba's DTMOSIV series, known for its high-performance semiconductor components.
This model is manufactured in Japan, ensuring high standards of quality and performance.
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