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Toshiba N-Channel Enhancement Mode MOSFET TO-220 100 V 52 A 30 W TK22A10N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK22A10N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 52A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 13.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- The MOSFET is an N-Channel enhancement type suitable for switching and amplification.
- It supports a maximum continuous drain current of 52 amperes for robust performance.
- The device withstands a maximum drain-source voltage of 100 volts ensuring reliability in high-voltage circuits.
- The TO-220 package facilitates through-hole mounting and offers good thermal dissipation.
- Maximum power dissipation is rated at 30 watts accommodating moderate power scenarios.
- The device has a low maximum drain-source resistance of 13.8 milliohms reducing conduction losses.
- Typical gate charge is 28 nanocoulombs at gate-source voltage 8 volts for good switching speed.
- Gate-source voltage tolerance ranges from -20 to +20 volts for safe operation.
Product Description
Toshiba TK22A10N1,S4X(S is an N-Channel enhancement mode MOSFET designed for industrial and electronic applications requiring high current and voltage handling capabilities within a TO-220 package.
This semiconductor device supports a continuous drain current of 52 A and a maximum drain-source voltage of 100 V, making it ideal for power switching, amplification, and motor control circuits.
The TO-220 through-hole mount package facilitates reliable soldering and efficient heat dissipation, which is critical for maintaining device stability during prolonged operation.
Its low on-resistance of 13.8 mΩ minimizes conduction losses, improving overall system efficiency. The typical gate charge of 28 nC at 8 V promotes swift switching actions beneficial in power electronics.
The MOSFET can tolerate gate-source voltages from -20 to +20 V safely, and it has a forward voltage drop of about -1.2 V when conducting.
Designed to operate at maximum temperatures up to 150°C, this device is suitable for demanding environments commonly found in automotive electronics, industrial machinery, and power management systems.
Physical dimensions include a height of 15 mm, length of 10 mm, and width of 4.5 mm, enabling compact designs on printed circuit boards. The MOSFET is an N-Channel enhancement type suitable for switching and high-current applications.
Maximum continuous drain current of 52 A supports robust load handling. Maximum drain-source voltage rating of 100 V ensures voltage tolerance. TO-220 package with through-hole mount offers mechanical stability and heat dissipation.
Low on-resistance (13.8 mΩ) reduces power loss and improves efficiency. Typical gate charge of 28 nC allows fast switching performance. Gate-source voltage range is -20 to +20 V for device protection. Forward voltage approximately -1.2 V during conduction.
Maximum operating temperature of 150°C suits harsh environments. Compact form factor suits space-constrained assemblies. This Toshiba MOSFET is commonly utilized in industrial automation, power supplies, motor drives, and consumer electronics requiring efficient and reliable switching components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 52 A, allowing it to handle robust load requirements.
This MOSFET has a maximum drain-source voltage rating of 100 V, ensuring it can operate reliably in high-voltage applications.
It uses a TO-220 package, which facilitates through-hole mounting and provides good thermal dissipation.
The maximum power dissipation for this MOSFET is rated at 30 W, accommodating moderate power scenarios.
The gate-source voltage tolerance ranges from -20 V to +20 V, allowing for safe operation within this range.
The typical gate charge at a gate-source voltage of 8 V is 28 nC, promoting good switching speed.
The physical dimensions are 15 mm in height, 10 mm in length, and 4.5 mm in width, making it suitable for compact designs.
This MOSFET can operate at a maximum temperature of 150°C, suitable for demanding environments.
The maximum drain-source resistance is 13.8 mΩ, which helps reduce conduction losses.
This MOSFET is suitable for industrial automation, power supplies, motor drives, and consumer electronics requiring efficient switching.
The device has a pin count of 3, which is typical for a TO-220 package.
This model utilizes an N-channel enhancement type, making it suitable for switching and amplification applications.
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