DiodesZetex Isolated 2 N-Channel Power MOSFET 280mA, 60V, 150mW, 6-Pin SOT-563 2N7002VC-7

DiodesZetex 2N7002VC-7 is an isolated dual N-Channel power MOSFET transistor designed for use in power management and switching applications within electronics and electrical engineering fields. With a maximum continuous drain current rating of 280 mA and maximum drain-source voltage of 60 V, this component ensures dependable operation under varying load and voltage conditions.

The device is housed in a compact 6-pin SOT-563 surface mount package, measuring 1.7 mm in length, 1.25 mm in width, and 0.6 mm in height, enabling integration into space-constrained circuit boards. Its enhancement mode channel type and low maximum drain-source resistance (13.5 Ω) facilitate efficient switching and heat management within circuits.

The 2N7002VC-7 functions within extreme temperature ranges, from -55°C up to +150°C, making it suitable for industrial, automotive, and harsh environmental applications. It complies with important standards such as AEC-Q101, UL 94V-0, MIL-STD-202, J-STD-020, and RoHS, supporting quality and environmental safety requirements.

Featuring dual transistor elements per chip, it enhances circuit functionality where multiple transistor outputs are required. The transistor configuration is isolated, improving circuit interference resistance and performance stability.

This MOSFET is widely applicable in power supplies, automotive electronics, industrial controls, instrumentation, and consumer electronics where reliable and compact switching components are vital. The surface mount technology ensures efficient automated PCB assembly and manufacturing scalability.

Dual N-Channel isolated MOSFET configuration suitable for power management. Maximum continuous drain current of 280 mA ensuring moderate power handling. Operating voltage up to 60 V supports a wide range of circuit designs.

Low maximum drain-source resistance of 13.5 Ω for efficient switching. Compact 6-pin SOT-563 surface mount package with dimensions 1.7mm by 1.25mm by 0.6mm. Wide operating temperature range from -55°C to +150°C for robust performance.

Maximum power dissipation rating of 150 mW suitable for low power applications. Meets automotive standard AEC-Q101 and other certifications ensuring reliability. Enhancement mode transistor with maximum gate-source voltage of -40V to +40V.

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