onsemi PowerTrench N-Channel MOSFET, 40 A, 150 V Enhancement Mode, 8-Pin WDFN Package FDMS86200DC

onsemi FDMS86200DC is a PowerTrench N-Channel MOSFET designed for high-efficiency switching and power management applications. With a maximum continuous drain current of 40 A and a rated voltage of 150 V, this component is well-suited for demanding electronic circuits requiring robust performance.

The enhancement mode channel technology offers improved switching speed and high reliability. Its compact 8-pin WDFN package allows for a low-profile mounting on PCBs, conserving valuable board space.

This MOSFET operates within a broad temperature range from -55°C to 150°C, making it suitable for diverse industrial, automotive, and power management applications. It delivers a maximum power dissipation of 125 W under optimal cooling conditions, enabling it to handle substantial power without thermal failure.

Key features like a typical gate charge of 30 nC at Vgs and low on-resistance (35 mΩ max) reduce switching losses and conduction losses respectively, improving overall system efficiency. The forward voltage of 1.3 V further contributes to minimizing power dissipation during operation.

Manufactured in Germany, onsemi ensures quality and compliance with international standards although there are no specific certifications listed for this device. This MOSFET is intended for use in industrial electronics, power supplies, automotive electronics, and other high-performance electronic systems.

The device supports a maximum power dissipation of 125 W ensuring robust operation under heavy load conditions. It operates efficiently with a typical gate charge of 30 nC at Vgs, optimizing switching performance. The MOSFET has a low maximum drain source resistance of 35 milliohms, minimizing conduction losses.

The component maintains stable operation across a wide temperature range from -55°C to 150°C. Its compact dimensions of 5.1 mm length, 5.85 mm width, and 1 mm height enable space-saving circuit designs. Features a forward voltage drop of 1.3 V, contributing to energy efficiency in power electronics.

Designed for surface mount assembly, facilitating automated manufacturing processes. Manufactured in Germany, ensuring high-quality standards and reliability. Explore more on Power MOSFETs from onsemi at EnvMart for your electronic component needs.