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| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK46A08N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 8.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Toshiba TK46A08N1,S4X(S is a high-performance N-Channel Enhancement MOSFET transistor designed for discrete semiconductor applications. It is engineered to handle continuous drain currents up to 46 amps and withstand a maximum drain-source voltage of 80 volts. The device comes in a TO-220 package with 3 pins supporting through-hole PCB mounting and efficient heat dissipation.
Its low maximum drain-source resistance of 8.4 milliohms reduces power loss and improves switching efficiency, making it well suited for power electronics, switching regulators, motor drivers, and industrial control circuits. The enhancement mode operation provides reliable turn-on characteristics with a typical gate charge of 37 nanocoulombs, enabling fast and efficient switching performance.
The MOSFET supports a maximum power dissipation of 35 watts, allowing operation under moderate thermal loads, with a maximum operating temperature rating of 150 degrees Celsius. The device features gate-source voltage tolerance from -20 to +20 volts and a forward voltage rating of -1.2 volts.
Measuring 10 mm in length, 15 mm in height, and 4.5 mm in width, this compact TO-220 MOSFET integrates easily into electronic assemblies requiring power switching capabilities. It is produced in China under the TK series from Toshiba, ensuring consistent manufacturing quality but has no specific automotive approval certifications.
Maximum continuous drain current: 46 A. Maximum drain-source voltage: 80 V. Package type: TO-220. Pin count: 3, through-hole mount. Maximum drain-source resistance: 8.4 mΩ. Gate charge: 37 nC at specified Vgs. Power dissipation rating: 35 W.
Operating temperature max: 150°C. Dimensions: 10 mm × 15 mm × 4.5 mm (L × H × W). Channel mode: Enhancement.
This transistor is highly suitable for industrial circuits including power management, motor control, and switching applications in laboratory, manufacturing, and electronic product assembly fields. Explore more semiconductor components at EnvMart to meet your precise engineering requirements.
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