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Toshiba N-Channel Enhancement MOSFET 46 A 80 V TO-220 3-Pin TK46A08N1,S4X(S

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin China
Brand Toshiba
Height 15mm
Length 10mm
Model TK46A08N1,S4X(S
Width 4.5mm
Mount Type Through Hole
Series TK
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 46A
Maximum Drain Source Voltage Vds 80V
Maximum Drain Source Resistance Rds 8.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 35W
Typical Gate Charge Qg @ Vgs 37nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Supports maximum continuous drain current of 46 A for high current applications.
  • Rated for a maximum drain-source voltage of 80 V ensuring robust operation in switching circuits.
  • Features a low maximum drain-source resistance of 8.4 mΩ to minimize conduction losses.
  • Designed with enhancement mode channel for efficient switching performance.
  • Maximum power dissipation of 35 W allowing moderate heat load handling.
  • Typical gate charge of 37 nC at specified gate-source voltage facilitates fast switching.
  • Operates safely up to a maximum temperature of 150°C for reliable thermal endurance.
  • Encapsulated in TO-220 package type with three pins for easy PCB integration and mounting.

Product Description

Toshiba TK46A08N1,S4X(S is a high-performance N-Channel Enhancement MOSFET transistor designed for discrete semiconductor applications. It is engineered to handle continuous drain currents up to 46 amps and withstand a maximum drain-source voltage of 80 volts. The device comes in a TO-220 package with 3 pins supporting through-hole PCB mounting and efficient heat dissipation.

Its low maximum drain-source resistance of 8.4 milliohms reduces power loss and improves switching efficiency, making it well suited for power electronics, switching regulators, motor drivers, and industrial control circuits. The enhancement mode operation provides reliable turn-on characteristics with a typical gate charge of 37 nanocoulombs, enabling fast and efficient switching performance.

The MOSFET supports a maximum power dissipation of 35 watts, allowing operation under moderate thermal loads, with a maximum operating temperature rating of 150 degrees Celsius. The device features gate-source voltage tolerance from -20 to +20 volts and a forward voltage rating of -1.2 volts.

Measuring 10 mm in length, 15 mm in height, and 4.5 mm in width, this compact TO-220 MOSFET integrates easily into electronic assemblies requiring power switching capabilities. It is produced in China under the TK series from Toshiba, ensuring consistent manufacturing quality but has no specific automotive approval certifications.

Maximum continuous drain current: 46 A. Maximum drain-source voltage: 80 V. Package type: TO-220. Pin count: 3, through-hole mount. Maximum drain-source resistance: 8.4 mΩ. Gate charge: 37 nC at specified Vgs. Power dissipation rating: 35 W.

Operating temperature max: 150°C. Dimensions: 10 mm × 15 mm × 4.5 mm (L × H × W). Channel mode: Enhancement.

This transistor is highly suitable for industrial circuits including power management, motor control, and switching applications in laboratory, manufacturing, and electronic product assembly fields. Explore more semiconductor components at EnvMart to meet your precise engineering requirements.

Toshiba N-Channel Enhancement MOSFET 46 A 80 V TO-220 3-Pin TK46A08N1,S4X(S
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Frequently Asked Questions

The maximum continuous drain current of this model is 46 A, making it suitable for high current applications.

It is rated for a maximum drain-source voltage of 80 V, ensuring robust operation in switching circuits.

This MOSFET comes in a TO-220 package type with three pins for through-hole mounting.

The maximum power dissipation rating is 35 W, allowing it to handle moderate thermal loads.

The typical gate charge is 37 nC at the specified gate-source voltage, facilitating fast switching performance.

The dimensions of this model are 10 mm in length, 15 mm in height, and 4.5 mm in width.

It operates safely up to a maximum temperature of 150°C, providing reliable thermal endurance.

The maximum drain-source resistance is 8.4 mΩ, which helps minimize conduction losses.

This model features an enhancement mode channel, which provides efficient switching performance.

The MOSFET supports a maximum gate-source voltage tolerance of -20 V to +20 V.

It is suitable for power management, motor control, and switching applications in industrial circuits.

The forward voltage rating is -1.2 V, which is relevant for its operation in circuits.

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