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Toshiba TK N-Channel MOSFET, 30 A, 60 V Enhancement Mode, 3-Pin TO-220 TK30A06N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK30A06N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 16nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Supports continuous drain current of 30 A for robust performance.
- Maximum drain-source voltage rating of 60 V ensures suitability for medium voltage circuits.
- Encapsulated in TO-220 package facilitating through-hole mounting.
- Low on-resistance of 15 milliohms reduces conduction losses.
- Typical gate charge of 16 nC enabling fast switching capability.
- Maximum power dissipation of 25 W supports high power operations.
- Wide gate-source voltage tolerance of -20 to +20 V preventing damage from voltage spikes.
- Operates reliably up to 150°C maximum temperature.
Product Description
Toshiba TK30A06N1,S4X(S N-Channel MOSFET is a high-quality enhancement mode transistor designed for power switching, amplification, and voltage control in electronic circuits. It features a 3-pin TO-220 package suitable for through-hole mounting applications in industrial, commercial, and electronic manufacturing sectors.
This MOSFET supports a maximum continuous drain current of 30 A and a drain-source voltage of 60 V, making it ideal for medium voltage control circuits and power switching tasks. The low drain-source resistance of 15 milliohms ensures minimal power loss during conduction, enhancing energy efficiency.
The device has a typical gate charge of 16 nC at the gate-source voltage, enabling rapid switching and improved circuit responsiveness. Its power dissipation capability of up to 25 W allows it to be used in high power electronic designs without overheating.
With an operating temperature tolerance up to 150°C and a gate-source voltage range of -20 to +20 V, this MOSFET offers durable and reliable operation under demanding conditions.
The compact physical dimensions (height: 15 mm, length: 10 mm, width: 4.5 mm) and mounting style make it compatible with a wide range of printed circuit boards and mechanical designs.
The Toshiba TK3x series MOSFET is widely used in industrial electronics, power management, consumer electronics, and HVAC control systems, providing efficient switching performance and high reliability.
Supports continuous drain current of 30 A for robust performance. Maximum drain-source voltage rating of 60 V ensures suitability for medium voltage circuits. Encapsulated in TO-220 package facilitating through-hole mounting.
Low on-resistance of 15 milliohms reduces conduction losses. Typical gate charge of 16 nC enabling fast switching capability. Maximum power dissipation of 25 W supports high power operations. Wide gate-source voltage tolerance of -20 to +20 V preventing damage from voltage spikes.
Operates reliably up to 150°C maximum temperature. Compact dimensions with 15 mm height, 10 mm length, and 4.5 mm width. Manufactured in China under Toshiba's TK series with high reliability. Explore the Toshiba range and other MOSFETs in the Electronics & Electricals category on EnvMart for applications requiring durable and efficient power transistor solutions.
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Frequently Asked Questions
The Toshiba TK30A06N1,S4X(S supports a maximum continuous drain current of 30 A.
This model has a maximum drain-source voltage rating of 60 V, making it suitable for medium voltage circuits.
It is encapsulated in a TO-220 package, which facilitates through-hole mounting.
The typical gate charge is 16 nC at the gate-source voltage, enabling fast switching capabilities.
It supports a maximum power dissipation of 25 W, allowing for high power operations.
The maximum operating temperature for this MOSFET is 150°C.
The dimensions are 15 mm in height, 10 mm in length, and 4.5 mm in width.
The on-resistance is 15 milliohms, which helps to reduce conduction losses.
It has a wide gate-source voltage tolerance of -20 to +20 V, preventing damage from voltage spikes.
This model is widely used in industrial electronics, power management, consumer electronics, and HVAC control systems.
The Toshiba TK30A06N1,S4X(S has a 3-pin configuration.
It is an N-channel MOSFET, designed for enhancement mode operation.
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