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Vishay 2-Element Bi-Directional ESD Protection Diode 56W 2-Pin LLP1006 VCUT0505B-HD1-GS08

Category ESD Protection Diode Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 0.4mm
Length 1.05mm
Model VCUT0505B-HD1-GS08
Width 0.65mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type LLP1006
Minimum Operating Temperature -40°C
Pin Count 2
Number of Elements per Chip 2
Clamping Voltage VC 12V
Diode Configuration Dual
Direction Type Bi-Directional
Minimum Breakdown Voltage Vbr 7V
Maximum Reverse Stand-off Voltage Vwm 5V
Peak Pulse Power Dissipation Pppm 56W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 3.5A
Maximum Reverse Leakage Current 100nA

Key Features

  • This diode features a dual diode configuration with bi-directional direction type for effective ESD protection.
  • It has a minimum breakdown voltage of 7 V and maximum reverse stand-off voltage of 5 V.
  • The diode supports a maximum peak pulse current of 3.5 A and clamping voltage of 12 V.
  • Operating temperature ranges from -40°C to 125°C ensuring reliability under harsh conditions.
  • Surface mount design and small form factor (1.05 mm length x 0.65 mm width x 0.4 mm height) enables easy PCB integration.
  • Maximum reverse leakage current is only 100 nA, helping minimize power loss.
  • Complies with ESD protection standards according to IEC 61000 for electrostatic discharge mitigation.
  • The product is designed and manufactured for new condition use, originating from China.

Product Description

Vishay VCUT0505B-HD1-GS08 is a 2-element bi-directional ESD protection diode designed to safeguard sensitive electronic components from electrostatic discharge events. With a peak pulse power dissipation of 56 W and a compact 2-pin LLP1006 surface mount package, it provides robust protection while allowing efficient PCB layout for electronic applications.

This diode features a dual diode configuration in a bi-directional orientation to clamp voltage spikes caused by transient events. It has a minimum breakdown voltage (Vbr) of 7 V and a maximum reverse stand-off voltage (Vwm) of 5 V, making it suitable for protecting circuits at low voltage levels.

The diode withstands a maximum peak pulse current (Ippm) of 3.5 A and maintains a clamping voltage (VC) of 12 V, efficiently diverting destructive surges away from sensitive components. Its low maximum reverse leakage current of 100 nA reduces power loss and standby current drain.

Operating over a temperature range of -40°C to 125°C, this device is suitable for automotive, industrial, and consumer electronic applications where reliability is critical. Its small dimensions (1.05 mm length × 0.65 mm width × 0.4 mm height) support high-density PCB assembly and surface mounting techniques.

Manufactured in China, the diode does not carry additional certifications but complies with IEC 61000 ESD protection standards. It is supplied as a new product condition, ready for immediate integration into electronic designs requiring protection from electrostatic discharge and transient voltage spikes.

This diode features a dual diode configuration with bi-directional direction type for effective ESD protection. Minimum breakdown voltage is 7 V and maximum reverse stand-off voltage is 5 V. Maximum peak pulse power dissipation of 56 W and peak pulse current of 3.5 A.

Low leakage current of 100 nA ensures minimal power loss. Compact surface mount LLP1006 package with dimensions of 1.05 mm × 0.65 mm × 0.4 mm. Operating temperature range from -40°C to 125°C enables use in harsh conditions.

Compliant with IEC 61000 ESD protection standards for semiconductor protection. Explore more ESD Protection Diodes and semiconductor components at EnvMart for your industrial, automotive, and electronic manufacturing needs.

Vishay 2-Element Bi-Directional ESD Protection Diode 56W 2-Pin LLP1006 VCUT0505B-HD1-GS08
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Frequently Asked Questions

The peak pulse power dissipation of the Vishay VCUT0505B-HD1-GS08 is 56 W.

The maximum reverse stand-off voltage (Vwm) for this diode is 5 V.

The clamping voltage (VC) for this model is 12 V.

This diode can withstand a maximum peak pulse current of 3.5 A.

The operating temperature range for the Vishay VCUT0505B-HD1-GS08 is from -40°C to 125°C.

The dimensions of the LLP1006 package are 1.05 mm in length, 0.65 mm in width, and 0.4 mm in height.

This diode features 2 elements per chip in its dual diode configuration.

The maximum reverse leakage current is 100 nA, which helps minimize power loss.

This model supports surface mount design, facilitating easy integration into PCBs.

The minimum breakdown voltage (Vbr) for this diode is 7 V.

It complies with IEC 61000 ESD protection standards for electrostatic discharge mitigation.

The Vishay VCUT0505B-HD1-GS08 is manufactured in China.

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