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Vishay IRFP054PBF N-Channel MOSFET 70A 60V Enhancement Mode 3-Pin TO-247 Package

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 20.82mm
Length 15.87mm
Model IRFP054PBF
Width 5.31mm
Mount Type Through Hole
Series IRFP054
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 70A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 14mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 230W
Typical Gate Charge Qg @ Vgs 160nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 2.5V

Key Features

  • Maximum continuous drain current of 70 amperes.
  • Maximum drain-source voltage rating of 60 volts.
  • Low drain-source resistance of 14 milliohms for efficient operation.
  • Supports gate-source voltage range from -20 to +20 volts.
  • Typical gate charge is 160 nanocoulombs at gate-source voltage.
  • Maximum power dissipation of 230 watts for sustained high-power handling.
  • Package type TO-247 ensures robust mechanical and thermal characteristics.
  • Operating temperature ranges from -55 to 175 degrees Celsius.

Product Description

Vishay IRFP054PBF N-Channel MOSFET is a high-performance transistor designed for discrete semiconductor applications requiring robust power handling and high switching efficiency. It supports a maximum continuous drain current of 70 amperes with a maximum drain-source voltage of 60 volts. The enhancement mode MOSFET features a 3-pin TO-247 through-hole package, suitable for industrial, commercial, and electronic component manufacturing sectors.

This MOSFET is engineered to handle high power dissipation of up to 230 watts, with a typical gate charge of 160 nanocoulombs, enabling fast switching and energy-efficient operation. The transistor's low drain-source resistance of 14 milliohms contributes to lowered conduction losses in circuits.

Operational temperature range spans from -55°C to 175°C, making it reliable in varying thermal environments. It supports gate-source voltages in the range of -20V to +20V, with a forward voltage drop of 2.5 volts.

Its TO-247 package provides robust mechanical stability and efficient heat dissipation. Ideal for applications in power management, electronic control systems, industrial automation, and power supplies.

Maximum continuous drain current of 70 amperes. Maximum drain-source voltage of 60 volts. Low drain-source resistance for efficient conduction. Wide gate-source voltage range supporting flexible control. High power dissipation capacity for demanding applications.

Wide operating temperature range from -55°C to 175°C. Robust TO-247 package type for through-hole mounting. Forward voltage of 2.5 volts. Suitable for industrial and electronic manufacturing applications. Manufactured in China ensuring quality manufacturing standards.

This Vishay N-Channel MOSFET is a reliable component for engineers and technicians focusing on power transistor integration in circuits requiring robust performance and efficiency. For additional technical documents, schematics, and design models, consult Vishay semiconductor resources.

Explore more MOSFETs and semiconductor devices in the Electronics & Electricals category at EnvMart.

Vishay IRFP054PBF N-Channel MOSFET 70A 60V Enhancement Mode 3-Pin TO-247 Package
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Frequently Asked Questions

The maximum continuous drain current for this model is 70 amperes.

The maximum drain-source voltage rating is 60 volts.

It has a low drain-source resistance of 14 milliohms, which contributes to efficient operation.

The MOSFET supports a gate-source voltage range from -20 to +20 volts.

The typical gate charge at gate-source voltage is 160 nanocoulombs.

The maximum power dissipation is 230 watts, allowing for sustained high-power handling.

The dimensions of the TO-247 package are 20.82mm in height, 15.87mm in length, and 5.31mm in width.

The operating temperature range spans from -55°C to 175°C.

This model uses through-hole mounting.

The forward voltage drop is 2.5 volts.

This MOSFET features an N-channel type.

It is suitable for applications in power management, electronic control systems, industrial automation, and power supplies.

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