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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | IRFP054PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP054 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 14mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2.5V |
Vishay IRFP054PBF N-Channel MOSFET is a high-performance transistor designed for discrete semiconductor applications requiring robust power handling and high switching efficiency. It supports a maximum continuous drain current of 70 amperes with a maximum drain-source voltage of 60 volts. The enhancement mode MOSFET features a 3-pin TO-247 through-hole package, suitable for industrial, commercial, and electronic component manufacturing sectors.
This MOSFET is engineered to handle high power dissipation of up to 230 watts, with a typical gate charge of 160 nanocoulombs, enabling fast switching and energy-efficient operation. The transistor's low drain-source resistance of 14 milliohms contributes to lowered conduction losses in circuits.
Operational temperature range spans from -55°C to 175°C, making it reliable in varying thermal environments. It supports gate-source voltages in the range of -20V to +20V, with a forward voltage drop of 2.5 volts.
Its TO-247 package provides robust mechanical stability and efficient heat dissipation. Ideal for applications in power management, electronic control systems, industrial automation, and power supplies.
Maximum continuous drain current of 70 amperes. Maximum drain-source voltage of 60 volts. Low drain-source resistance for efficient conduction. Wide gate-source voltage range supporting flexible control. High power dissipation capacity for demanding applications.
Wide operating temperature range from -55°C to 175°C. Robust TO-247 package type for through-hole mounting. Forward voltage of 2.5 volts. Suitable for industrial and electronic manufacturing applications. Manufactured in China ensuring quality manufacturing standards.
This Vishay N-Channel MOSFET is a reliable component for engineers and technicians focusing on power transistor integration in circuits requiring robust performance and efficiency. For additional technical documents, schematics, and design models, consult Vishay semiconductor resources.
Explore more MOSFETs and semiconductor devices in the Electronics & Electricals category at EnvMart.
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