Vishay N-Channel MOSFET, 7.7 A, 60 V Enhancement, 3-Pin TO-252 IRLR014TRPBF

Vishay IRLR014TRPBF is a high-performance N-Channel MOSFET designed for discrete semiconductor applications requiring efficient and reliable switching up to 7.7 A continuous current and 60 V drain-source voltage. Housed in a compact 3-pin TO-252 surface-mount package, the device offers low resistance and fast response, making it suitable for power management in industrial, electronic, and automotive equipment.

This MOSFET operates with enhancement channel mode, providing controlled switching behavior ideal for electronic circuit designs. Its typical gate charge of 8.4nC ensures efficient gate drive, while the maximum gate-source voltage rating of ±10 V allows robust control interface tolerance.

The device is rated for a maximum operating temperature of 150°C and a minimum temperature of -55°C, supporting reliable use under harsh thermal conditions encountered in manufacturing and industrial environments.

With a maximum power dissipation of 25 W and a forward voltage drop of 1.6 V, this MOSFET offers balanced performance between power handling and efficiency. The physical dimensions (6.73 mm length, 6.22 mm width, 2.38 mm height) allow compact PCB layout and cost-effective surface mounting.

Continuous drain current: 7.7 A. Drain-source voltage: 60 V. TO-252 surface mount package. Channel mode: enhancement. Gate charge: 8.4 nC @ Vgs. Forward voltage drop: 1.6 V. Operating temperature range: -55°C to 150°C. Maximum power dissipation: 25 W.

Compact physical size.

This product is manufactured in Malaysia following Vishay’s quality standards. It is ideal for use in power electronics, switching regulators, motor control circuits, and other discrete semiconductor applications in industrial, commercial, and automotive sectors.

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