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Vishay N-Channel Enhancement MOSFET 1.5 A 100 V 4-Pin SOT-223 IRFL110TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IRFL110TRPBF |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | IRFL |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 540mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.1W |
| Typical Gate Charge Qg @ Vgs | 8.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2.5V |
Key Features
- Offers a maximum continuous drain current of 1.5 A for efficient load handling.
- Supports a drain-source voltage of up to 100 V for high voltage applications.
- Features a low maximum drain-source resistance of 540 mΩ to reduce power losses.
- Designed in a compact 4-pin SOT-223 surface mount package for easy PCB integration.
- Provides a maximum power dissipation of 3.1 W allowing stable operation.
- Operates safely in temperatures ranging from -55°C to 150°C for robust performance.
- Has a typical gate charge of 8.3 nC enabling fast switching speeds.
- Maximum gate-to-source voltage is ±20 V, providing gate control flexibility.
Product Description
Vishay IRFL110TRPBF is a high-quality N-Channel Enhancement MOSFET designed for electronics and power management applications. This device offers a continuous drain current of 1.5 A and a drain-source voltage rating of 100 V, making it suitable for moderate power semiconductor switching tasks.
The MOSFET features a low drain-source resistance of 540 mΩ, which helps minimize conduction losses and improves efficiency in circuits. Packaged in a compact 4-pin SOT-223 surface mount case, it facilitates easy PCB mounting in a variety of industrial, consumer electronics, and automotive control circuits.
This product can dissipate up to 3.1 W of power, supporting robust operational stability over a wide temperature range from -55°C to 150°C, ensuring reliability in harsh environments. The typical gate charge is 8.3 nC at a gate-to-source voltage, allowing for rapid switching capabilities essential for high-speed power electronics.
The device’s maximum gate-source voltage rating of -20 V to +20 V provides ample margin for gate drive voltages, while the forward voltage of 2.5 V ensures compatibility with standard power designs. Physical dimensions of 6.7 mm length, 3.7 mm width, and 1.8 mm height make it suitable for dense layouts.
Vishay’s IRFL110TRPBF MOSFET is used extensively in industrial automation, power supplies, battery management, and in switching regulators. It enables efficient power conversion and amplification in electronic circuits.
Maximum continuous drain current: 1.5 A. Drain-source voltage: 100 V. Low Rds(on) of 540 mΩ. Power dissipation up to 3.1 W. Operating temperature range -55°C to 150°C. SOT-223 surface mount package with 4 pins. Typical gate charge: 8.3 nC for fast switching.
Gate-source voltage rating ±20 V. Compact physical size for easy PCB mounting. Forward voltage: 2.5 V.
This MOSFET is a reliable component for engineering applications, offering efficient power control and switching capabilities. For comprehensive electronics projects and manufacturing needs, explore further Vishay semiconductor products available on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.5 A.
It supports a maximum drain-source voltage of 100 V, making it suitable for high voltage applications.
This MOSFET features a low maximum drain-source resistance of 540 mΩ, which helps reduce power losses.
The typical gate charge is 8.3 nC, enabling fast switching speeds in electronic circuits.
The physical dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
It can dissipate up to 3.1 W, allowing for stable operation in various applications.
This model operates safely in temperatures ranging from -55°C to 150°C.
The maximum gate-to-source voltage rating is ±20 V, providing flexibility for gate control.
It is designed for surface mounting, specifically in a 4-pin SOT-223 configuration.
This model is used extensively in industrial automation, power supplies, battery management, and switching regulators.
The forward voltage is 2.5 V, ensuring compatibility with standard power designs.
It is an N-channel enhancement MOSFET, designed for efficient power control and switching.
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