Vishay ThunderFET N-Channel MOSFET, 20 A Continuous Drain Current, 100 V Drain Source Voltage, 8-Pin SOIC SI4090DY-T1-GE3

Vishay SI4090DY-T1-GE3 is a high-performance ThunderFET N-Channel MOSFET designed for reliable medium voltage applications. This 8-pin SOIC packaged device delivers a maximum continuous drain current of 20 A and can withstand drain-source voltages up to 100 V, making it ideal for use in efficient power switching circuits.

The device is built using enhancement mode technology and features a very low typical drain-source resistance of 12 milliohms, which minimizes conduction losses during operation. It supports surface mount technology, allowing streamlined integration onto printed circuit boards in compact electronic designs.

With a maximum power dissipation rating of 7.8 watts, the SI4090DY-T1-GE3 MOSFET can operate reliably even under demanding thermal conditions. It supports a broad operating temperature range from -55°C up to 150°C, suitable for diverse industrial and commercial environments.

The device exhibits typical gate charge of 45.6 nC at a gate voltage of 4.5 V, enabling fast switching speeds. It safely tolerates gate-source voltages ranging from -20 V to +20 V. A forward voltage of 1.1 V ensures efficient conduction during switching events.

Compact package dimensions (5 mm length, 4 mm width, and 1.5 mm height) accommodate dense circuit layouts without compromising thermal management. This MOSFET is commonly used across electronic components, power and semiconductor applications, including industrial power supplies, motor drives, and switching regulators.

Designed with ThunderFET technology for efficient power handling. Enhancement mode channel with low drain-source resistance of 12 milliohms. Supports surface mount technology for easy PCB integration. Maximum power dissipation is 7.8 watts, suitable for medium voltage applications.

Operates over a wide temperature range from -55°C to 150°C. Typical gate charge of 45.6 nC at a gate-source voltage of 4.5 V. Supports gate-source voltages between -20 V and +20 V. Forward voltage of 1.1 V ensuring efficient switching performance.

Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height. Ideal for use in power semiconductor and electronic component applications.

This product is an excellent choice for design engineers seeking reliable and efficient power MOSFETs for general-purpose electronic manufacturing, laboratory, HVAC, automotive, and industrial control systems. Explore other Vishay electronic components and power semiconductors in the EnvMart catalog for comprehensive sourcing.