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Vishay Isolated TrenchFET 2 N-Channel MOSFET, 8 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SQ4920EY-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SQ4920EY-T1_GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 17.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.4W |
| Typical Gate Charge Qg @ Vgs | 19.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.75V |
| Transistor Configuration | Isolated |
Key Features
- Dual N-Channel configuration for versatile applications.
- TrenchFET technology ensures low on-resistance of 17.5 mΩ.
- Supports surface mounting for efficient PCB integration.
- High maximum power dissipation of 4.4 W allows reliable thermal management.
- Wide operating temperature range from -55°C to 175°C ensures robust performance.
- Gate charge of 19.7 nC optimizes switching speeds.
- Compliance with automotive AEC-Q101 standard for dependability.
- Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height.
Product Description
Vishay SQ4920EY-T1_GE3 Isolated TrenchFET 2 N-Channel MOSFET is engineered for high-performance semiconductor applications requiring efficient power control. This device supports a maximum continuous drain current of 8 A and a maximum drain-to-source voltage of 30 V. Packaged in an 8-pin SOIC, it features isolated transistor configuration and utilizes TrenchFET technology, delivering a minimal drain-source resistance of 17.5 mΩ and a typical gate charge of 19.7 nC. It operates reliably within a wide temperature range of -55°C to 175°C.
This MOSFET is suitable for industrial, automotive, electronic circuit, and power management applications, providing efficient surface mount assembly. The device complies with automotive-grade AEC-Q101, ensuring robustness for demanding environments.
Its compact form factor measuring 5 mm in length, 4 mm in width, and 1.5 mm in height supports integration in space-constrained designs. The maximum power dissipation rating of 4.4 W helps maintain thermal stability during operation under typical conditions.
Dual N-Channel TrenchFET for optimal switching performance. Low on-resistance minimizes energy losses. Surface mountable 8-pin SOIC package enhances PCB layout flexibility. Wide operating temperature range meets industrial standards.
Compliant with automotive AEC-Q101 for high reliability. Suitable for power management and semiconductor discrete component needs.
This Vishay MOSFET is ideal for electronics manufacturers, automotive system designers, laboratory projects, and embedded system engineers requiring a dependable transistor device. Explore more in the MOSFET category at EnvMart for compatible components and technical accessories.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
This MOSFET has a maximum drain-to-source voltage rating of 30 V.
The on-resistance is rated at 17.5 mΩ, which helps minimize energy losses.
The typical gate charge is 19.7 nC, optimizing switching speeds.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
It operates reliably within a temperature range of -55°C to 175°C.
This model supports surface mounting, which enhances PCB layout flexibility.
It complies with the automotive AEC-Q101 standard, ensuring robustness in demanding environments.
The maximum power dissipation rating is 4.4 W, which helps maintain thermal stability during operation.
It features an isolated transistor configuration with dual N-channel elements.
This model is packaged in an 8-pin SOIC format.
It is suitable for industrial, automotive, electronic circuit, and power management applications.
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