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Vishay Isolated TrenchFET Dual Type P and Type N Channel MOSFET, 6 A Current, 30 V Drain Source Voltage SI4532CDY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4532CDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.78W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- Dual N/P-channel MOSFET transistor in an 8-Pin SOIC package.
- Maximum continuous drain current of 6 A suitable for power applications.
- Drain to Source voltage rated at 30 V with low on-resistance.
- Enhancement mode transistor configuration for controlled switching.
- Maximum power dissipation of 2.78 W ensures efficiency in thermal management.
- Operating temperature range from -55°C to +150°C supports harsh environments.
- Pin count of 8 pins designed for surface mount applications.
- Transistor configuration is isolated for noise and interference reduction.
Product Description
Vishay's SI4532CDY-T1-GE3 is a high-performance isolated TrenchFET dual MOSFET device combining both Type P and Type N channel transistors in a compact 8-pin SOIC surface mount package. Designed for enhancement mode operation, this MOSFET provides a maximum continuous drain current of 6 A and a drain-source voltage rating of 30 V, making it ideal for efficient power switching in various industrial and electronic applications.
This device features a low maximum drain source resistance of 140 mΩ, ensuring minimal power loss and enhanced circuit efficiency. The maximum power dissipation rating of 2.78 W and operating temperature range of -55°C to +150°C make it robust for demanding environments including industrial controls, consumer electronics, and automotive-grade designs. Its isolated transistor configuration helps reduce noise interference and improve signal integrity.
The SI4532CDY-T1-GE3 offers fast switching capabilities with a typical gate charge of 6 nC at gate-source voltage and supports maximum gate source voltages of -20 V to +20 V. The surface mount SOIC package with 8 pins enables easy PCB assembly and compact design layouts. With dimensions of 5 mm in length, 4 mm width, and 1.5 mm height, this MOSFET fits well in space-constrained applications.
Packaged and tested to Vishay semiconductor quality standards, this MOSFET transistor is suitable for industrial power management, motor control circuits, and electronic switching in HVAC and manufacturing systems. It provides reliable and efficient switching solutions for engineers seeking dual-channel MOSFETs with isolated trench technology.
Dual Type P and Type N Channel MOSFET configuration. Maximum continuous drain current of 6 A with 30 V drain-source voltage. Low 140 mΩ drain-source resistance for power efficiency. Enhancement mode operation for precision control.
Compact and reliable 8-pin SOIC surface mount packaging. Wide operating temperature range from -55°C to +150°C. Typical gate charge of 6 nC for fast switching. Isolated transistor configuration reduces noise interference.
Suitable for industrial, automotive, and electronic power applications. Dimensions of 5 mm x 4 mm x 1.5 mm for space-saving designs.
Explore a wide range of Vishay semiconductor components and related MOSFET devices in the Electronics & Electricals category on EnvMart, ideal for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 6 A.
It has a drain-source voltage rating of 30 V.
The maximum power dissipation for this model is 2.78 W.
The typical gate charge is 6 nC at gate-source voltage.
The operating temperature range is from -55°C to +150°C.
It comes in an 8-pin SOIC package type.
The maximum drain-source resistance is 140 mΩ.
This model features an isolated transistor configuration.
It includes both Type P and Type N channel transistors.
The height is 1.5 mm and the width is 4 mm.
It is suitable for industrial power management, motor control circuits, and electronic switching in HVAC and manufacturing systems.
The maximum gate-source voltage is -20 V to +20 V.
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