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onsemi Isolated 2 N-Channel Power MOSFET 4 A 30 V Enhancement Mode 8-Pin SOIC NTMD4N03R2G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | NTMD4N03R2G |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.82V |
| Transistor Configuration | Isolated |
Key Features
- Maximum continuous drain current of 4 A for efficient power handling.
- Enhancement mode channel operation providing reliable switching.
- Maximum drain-source resistance of 80 milliohms ensuring low conduction losses.
- Wide operating temperature range from -55°C to +150°C.
- Compact package dimensions with 4 mm width, 5 mm length and 1.5 mm height.
- Typical gate charge of 8 nC at gate-source voltage for fast switching.
- Supports automotive standard AEC-Q101 for quality assurance.
- Power dissipation up to 2 W allowing moderate power applications.
Product Description
The onsemi NTMD4N03R2G is an isolated 2 N-Channel Power MOSFET designed primarily for surface mount applications requiring efficient power management at low voltages.
With a maximum continuous drain current of 4 A and a voltage rating of 30 V, this device is ideal for compact power switching circuits in industrial, automotive, and consumer electronic applications.
Featuring enhancement mode operation, the transistor delivers reliable switching performance with a low maximum drain-source resistance of 80 milliohms, minimizing conduction losses and heat generation.
The MOSFET package is a compact 8-pin SOIC with dimensions of 4 mm width, 5 mm length, and 1.5 mm height, making it suitable for space-constrained PCB layouts.
Operating across a wide temperature range from -55°C up to +150°C and compliant with automotive standard AEC-Q101, the NTMD4N03R2G ensures durability and stability in demanding environments.
The typical gate charge of 8 nC facilitates fast switching speeds, beneficial for modern electronics requiring efficient power modulation. Maximum continuous drain current: 4 A. Voltage maximum: 30 V. Package type: SOIC 8-pin surface mount.
Operating temperature range: -55°C to +150°C. Maximum power dissipation: 2 W. Channel type: N-Channel enhancement mode. Drain-source resistance (Rds): 80 mΩ max. Typical gate charge: 8 nC @ Vgs. Automotive standard compliance: AEC-Q101.
Compact dimensions: 4 x 5 x 1.5 mm. This MOSFET is applicable in a variety of industries including industrial automation, automotive electronics, consumer electronics, and power management systems. Explore the Electronics & Electricals category for more power semiconductor devices and related components at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A.
The maximum drain-source voltage rating is 30 V.
The maximum drain-source resistance is 80 milliohms.
The typical gate charge is 8 nC at the gate-source voltage.
The package dimensions are 4 mm in width, 5 mm in length, and 1.5 mm in height.
The operating temperature range is from -55°C to +150°C.
The maximum power dissipation is 2 W.
This model complies with the automotive standard AEC-Q101.
This model uses surface mount technology.
The NTMD4N03R2G has 8 pins.
The channel type is N-Channel enhancement mode.
This MOSFET is applicable in industrial automation, automotive electronics, consumer electronics, and power management systems.
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