onsemi Isolated 2 Type P-Channel MOSFET, 880 mA, 20 V Enhancement, 6-Pin SOT-363 NTJD4152PT1G

onsemi NTJD4152PT1G is a dual P-Channel MOSFET transistor offering isolated configuration and enhancement mode operation for switching and amplification needs. Operating with a maximum continuous drain current of 880 mA and a maximum drain-source voltage of 20 V, this device is tailored for reliable performance in sensitive electronic circuits.

Encased in a compact 6-pin SOT-363 surface mount package, it measures just 2.2 mm in length, 1.35 mm in width, and 1 mm in height, which facilitates dense PCB layouts. The device's low maximum drain-source resistance of 1 ohm permits efficient current flow with minimal losses. Its typical gate charge of 2.2 nC at specified voltages supports rapid switching speeds necessary for high-frequency operations.

Designed to operate within a wide temperature range from -55°C to 150°C, this MOSFET meets the stringent automotive standard AEC-Q101, making it ideal for automotive and industrial applications. It also features maximum power dissipation of 350 mW and a forward voltage of approximately -0.8 V, balancing power efficiency and reliability.

This transistor is suitable for industrial, automotive, and electronic assembly tasks involving power management, signal switching, and precise control circuits requiring robust and compact P-Channel MOSFETs. Its isolated transistor configuration enhances integration flexibility and thermal management.

This MOSFET offers isolated dual P-Channel architecture within a 6-pin SOT-363 surface mount package. Maximum continuous drain current of 880 mA supports moderate power applications. Maximum drain-source voltage of 20 V suits small signal and low voltage power switching use cases.

Device complies with AEC-Q101 automotive quality standard for enhanced reliability. Operating temperature range of -55°C to 150°C provides suitability for harsh environments. Low gate charge and drain-source resistance optimize switching efficiency and reduce losses.

Maximum power dissipation of 350 mW ensures robust thermal performance in embedded systems.

This product is categorized under MOSFET semiconductors suitable for electronic component inventories and applications including automotive electronics, power conversion circuits, and industrial automation. Explore more MOSFETs and semiconductor devices at EnvMart for comprehensive engineering and manufacturing solutions.