onsemi N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 Package NTD18N06LT4G

onsemi NTD18N06LT4G is a high-performance N-Channel MOSFET transistor designed for efficient power management in electronic circuits. It supports a maximum continuous drain current of 18 A and withstands drain-source voltages up to 60 V. Packaged in a TO-252 surface mount casing with 3 pins, this device is optimized for applications requiring compact and reliable switching components.

This MOSFET exhibits a low on-resistance of 65 milliohms, facilitating high efficiency and low thermal dissipation in switching operations. Its enhancement mode channel allows for precise power control, making it suitable for industrial and commercial power electronics, including power supplies, motor control, and automotive electronics.

With an operating temperature range spanning from -55 degrees Celsius to 175 degrees Celsius, it is engineered to withstand harsh environments and maintain performance stability. The device's maximum power dissipation of 55 watts ensures it can handle significant power loads without damage.

The typical gate charge of 11 nanocoulombs contributes to minimal switching losses, enhancing energy efficiency. The maximum gate-source voltage between -15 and +15 volts provides safe voltage margins for gate drive circuits. Its forward voltage drop of 1.6 volts further assists in reducing energy loss during conduction.

The physical dimensions - length of 6.73 mm, width of 6.22 mm, and height of 2.38 mm - support dense circuit board designs without compromising electrical performance. Although this MOSFET does not carry any specific industry approvals, it meets essential quality and performance criteria for semiconductor discrete components.

Typical uses include applications in electronic components, power and connectors, discrete semiconductors for industrial automation, consumer electronics, and automotive power management systems. It is a versatile transistor that integrates easily into modern electronic devices needing efficient switching control.

This MOSFET features a TO-252 surface mount package enabling easy PCB mounting. It has a low maximum drain-source resistance of 65 milliohms, optimizing efficiency. The device operates reliably across a temperature range from -55°C to 175°C.

The maximum power dissipation rating is 55 W, supporting high power applications. The typical gate charge is low at 11 nC, reducing switching losses. It has a maximum gate-source voltage rating of -15 to +15 volts for safe operation.

The forward voltage drop is 1.6 volts, minimizing conduction losses. The compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height allow for dense PCB layouts. Explore more semiconductor components like power MOSFETs with onsemi reliability and performance at EnvMart.