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DiodesZetex Small Signal PNP Transistor BC857BW-7-F, 100 mA, 45 V, 3-Pin SOT-323 BC857BW-7-F

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model BC857BW-7-F
Width 2.2mm
Mount Type Surface
Series BC857BW
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz
onsemi FJX992TF PNP Transistor, 100 mA, 120 V, 3-Pin SOT-323Brand onsemi

Key Features

  • Maximum DC collector current of 100 mA supports low power applications.
  • Collector-emitter voltage limit is 45 V ensuring moderate voltage operation.
  • Small dimensions with length and width of 2.2 mm optimize PCB space.
  • High current gain hFE of 220 improves amplification efficiency.
  • Operating temperature range from -55°C to 150°C allows use in harsh environments.
  • Transistor polarity is PNP, suitable for complementary circuits.
  • Automotive compliant with AEC-Q100, AEC-Q101, and AEC-Q200 standards.
  • Power dissipation rated at 200 mW supports small signal uses.

Product Description

DiodesZetex BC857BW-7-F is a small signal PNP transistor designed for discrete semiconductor applications requiring reliable switching and amplification. Rated for a maximum DC collector current of 100 mA and a collector-emitter voltage of 45 V, it ensures dependable performance in low power and moderate voltage circuits.

The device comes in a compact 3-Pin SOT-323 surface mount package, measuring 2.2 mm in length and width and 1.1 mm in height, which is ideal for densely packed printed circuit boards.

This transistor features a high minimum DC current gain (hFE) of 220, which offers efficient amplification in signal processing. Its wide temperature operating range from -55°C to 150°C allows it to function well in industrial and automotive environments.

With a maximum power dissipation rating of 200 mW and a transition frequency (ft) of 200 MHz, it supports small signal switching and amplification applications including automotive electronics complying with AEC-Q100, AEC-Q101, and AEC-Q200 standards.

Supports up to 100 mA collector current in PNP configuration. Compact SOT-323 surface mount package with three pins. Operating temperature from -55°C to 150°C for durability. High current gain suitable for amplifier circuits.

Complies with automotive AEC-Q standards. Moderate voltage handling of 45 V collector-emitter. Low power dissipation rated at 200 mW. Transition frequency of 200 MHz for moderate speed switching. Commonly used in electronic designs for signal amplification and switching in telecom, automotive, industrial controls, and consumer electronics.

Explore more Bipolar Transistors and DiodesZetex products on EnvMart for reliable semiconductor components suitable for your manufacturing and repair requirements.

DiodesZetex Small Signal PNP Transistor BC857BW-7-F, 100 mA, 45 V, 3-Pin SOT-323 BC857BW-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

The collector-emitter voltage limit is 45 V, ensuring moderate voltage operation.

This model has a length and width of 2.2 mm and a height of 1.1 mm, making it compact for PCB applications.

The operating temperature range is from -55°C to 150°C, allowing use in harsh environments.

The minimum DC current gain (hFE) is 220, which improves amplification efficiency.

It comes in a compact 3-Pin SOT-323 surface mount package.

Yes, it complies with automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.

The maximum power dissipation rating is 200 mW, suitable for small signal applications.

The transition frequency (ft) is 200 MHz, supporting moderate speed switching.

This model is a single PNP transistor, suitable for complementary circuits.

The maximum emitter-base voltage (VEBO) is -5 V.

The maximum collector-base voltage (VCBO) is -50 V.

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