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Toshiba Isolated Dual P-Channel MOSFET, 1.2 A, 20 V, 6-Pin UF6 Surface Mount SSM6P54TU(TE85L,F)

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Toshiba Isolated Dual P-Channel MOSFET, 1.2 A, 20 V, 6-Pin UF6 Surface Mount SSM6P54TU(TE85L,F)

Name: Toshiba Isolated Dual P-Channel MOSFET, 1.2 A, 20 V, 6-Pin UF6 Surface Mount SSM6P54TU(TE85L,F)
Brand: Toshiba
SKU: 313329
Price: 0.64 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	0.7mm
Length	2mm
Model	SSM6P54TU(TE85L,F)
Width	1.7mm
Mount Type	Surface
Series	SSM6
Maximum Operating Temperature	150°C
Package Type	UF6
Minimum Operating Temperature	-55°C
Pin Count	6
Number of Elements per Chip	2
Channel Type	Type P
Maximum Continuous Drain Current Id	1.2A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	228mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	7.7nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	0.8V
Transistor Configuration	Isolated

Key Features

This MOSFET features a low maximum drain-source resistance of 228 milliohms.
It supports an enhancement-type channel with a maximum power dissipation of 500 mW.
The device operates in a temperature range from -55°C to 150°C.
Package type is compact 6-pin UF6 suitable for surface mounting.
The transistor includes dual elements per chip, enhancing functionality.
Maximum gate-source voltage rating is -8 to +8 V to ensure safe gate operation.
The typical gate charge at Vgs is 7.7 nC, offering efficient switching.
Its forward voltage is rated at 0.8 V, providing stable device performance.

Product Description

The Toshiba SSM6P54TU(TE85L,F) is an isolated dual P-Channel MOSFET designed for surface mount applications requiring a compact footprint and reliable performance. With a maximum continuous drain current of 1.2 A and a drain-source voltage rating of 20 V, this device is ideal for power management circuits in electronics and electrical systems.

Designed with an enhancement-type channel mode, the MOSFET features a low Rds(on) of 228 milliohms to reduce conduction losses, making it energy-efficient in operation. It also boasts a maximum power dissipation of 500 mW, suitable for moderate power applications in various industrial and commercial setups.

The component comes in a 6-pin UF6 package with dimensions of 2 mm length, 1.7 mm width, and 0.7 mm height, supporting compact PCB layouts. Its dual-element chip configuration improves versatility while maintaining thermal stability. Operating temperature ranges from -55°C up to 150°C, making it suitable for harsh environments in laboratory, industrial electronics, and automotive systems where temperature resilience is critical.

Additional electrical specifications include a maximum gate-source voltage of -8 to +8 V and a typical gate charge of 7.7 nC at gate-source voltage, allowing for effective switching characteristics suitable for PWM and control circuits. The forward voltage of 0.8 V ensures predictable device behavior under load conditions.

Manufactured in Japan with stringent quality standards, the SSM6P54TU(TE85L,F) MOSFET is a reliable component intended for industrial, laboratory, electronic component manufacturing, and power management applications.

This MOSFET unit is surface mounted using a 6-pin UF6 package. It offers dual P-Channel elements for multiple circuit integration. Its voltage and current ratings make it suitable for discrete semiconductor roles in electronics.

The device is built to operate over extended temperature ranges for industrial reliability. The compact package supports modern electronics assembly and design. Explore more similar MOSFET components and electronics at EnvMart for enhanced industrial and technological solutions.