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Vishay SiR N-Channel MOSFET 116 A 80 V 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3

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Vishay SiR N-Channel MOSFET 116 A 80 V 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3

Name: Vishay SiR N-Channel MOSFET 116 A 80 V 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
Brand: Vishay
SKU: 309521
Price: 4.08 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Length	6.15mm
Model	SiR582DP-T1-RE3
Width	5.15mm
Mount Type	Surface
Series	SiR
Maximum Operating Temperature	150°C
Package Type	PowerPAK SO-8
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	116A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	0.0034Ω
Maximum Power Dissipation Pd	92.5W
Typical Gate Charge Qg @ Vgs	33.5nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This MOSFET features a low drain-source resistance of 0.0034 Ohm for efficient conduction.
The device supports a maximum power dissipation of 92.5 W enabling robust operation under load.
Typical gate charge at 33.5 nC ensures fast switching performance.
Operates across a temperature range of -55°C to 150°C allowing use in harsh environments.
Package type is PowerPAK SO-8 with an 8-pin layout suitable for surface mounting.
Maximum gate-source voltage is 20 V providing protection from voltage spikes.
Compact dimensions of 6.15 mm length and 5.15 mm width enable space-saving PCB placement.
RoHS compliant ensuring adherence to environmental regulations.

Product Description

Vishay SiR582DP-T1-RE3 is a high-performance N-Channel MOSFET designed for efficient power management in electronic circuits. This PowerPAK SO-8 packaged device supports a maximum continuous drain current of 116 amperes with a drain-source voltage rating of 80 volts. Its low Rds(on) of 0.0034 Ohm significantly reduces conduction losses, making it ideal for synchronous rectification, DC/DC converters, motor drive switches, and primary side switching applications.

The MOSFET operates reliably over a wide temperature range from -55°C up to 150°C. The typical gate charge of 33.5 nC at a gate-source voltage of 20 V enables fast switching with minimal losses. The 8-pin PowerPAK SO-8 surface mount package provides a compact footprint of 6.15 mm length by 5.15 mm width, aiding in optimized PCB layouts.

This device is RoHS compliant and undergoes stringent testing including 100% Rg and Unclamped Inductive Switching (UIS) tests, ensuring robustness and reliability in industrial, automotive, and consumer electronics environments.

116 A maximum continuous drain current for high current applications. 80 V drain-source voltage withstand provides wide voltage compatibility. PowerPAK SO-8 package supports surface mount assembly. Low drain-source resistance minimizes heat dissipation and improves efficiency.

Wide operating temperature range enables use in harsh conditions. Fast switching gate charge suited for switching power supplies. Compact footprint suitable for dense circuit designs. RoHS compliance guarantees environmental safety standards.

This SiR582DP-T1-RE3 MOSFET from Vishay is vital for engineers designing power-efficient systems requiring robust semiconductor solutions. Check EnvMart for related Vishay electronic components and advanced semiconductor products for electronic manufacturing and prototyping needs.