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Vishay N-Channel MOSFET 6 A Continuous Drain Current 6 V Drain Source Voltage PowerPAK SC-75 Package SIB4316EDK-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIB4316EDK-T1-GE3 |
| Mount Type | Surface |
| Series | SIB |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SC-75 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 6V |
| Maximum Drain Source Resistance Rds | 0.057Ω |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 3.5nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Typical ESD protection | 1500 V (HBM) |
Key Features
- Designed for load switching and power management applications.
- Low on-resistance ensures high efficiency in power conversion.
- Thermally enhanced PowerPAK SC-75 package for improved heat dissipation.
- Maximum gate-source voltage of 12 V supports wide control voltage range.
- Operating temperature range from -55°C to 150°C for robust performance.
- ESD protection rating of 1500 V (HBM) enhances reliability.
- Typical gate charge of 3.5 nC enabling fast switching.
- Maximum power dissipation of 1 W for compact designs.
Product Description
The Vishay SIB4316EDK-T1-GE3 N-Channel MOSFET delivers reliable power management suited to electronic circuits requiring up to 6 amps continuous drain current and 6 volts maximum drain-source voltage. Packaged in the thermally enhanced PowerPAK SC-75 surface mount package, it offers a small footprint and improved heat dissipation. Its low on-resistance (0.057 Ω) allows for efficient load switching and DC/DC converter applications.
Operating across a wide temperature range from -55°C to 150°C, this MOSFET ensures stable performance in diverse industrial, commercial, and automotive-related electronic systems. The device tolerates a maximum gate-source voltage of 12 V and features a typical gate charge of 3.5 nC, offering rapid switching capabilities essential for power control tasks.
Robustness is enhanced by typical ESD protection rated at 1500 V (HBM), and compliance with RoHS directives assures environmentally conscious manufacturing. The maximum power dissipation rating of 1 W minimizes thermal constraints in compact PCB layouts.
This component is suitable for applications in power management, load switching, DC/DC converters, and other semiconductor-based electronic designs, especially where compact size and efficient thermal handling are critical.
Designed for load switching and power management applications. Low on-resistance ensures high efficiency in power conversion. Thermally enhanced PowerPAK SC-75 package for improved heat dissipation. Maximum gate-source voltage of 12 V supports wide control voltage range.
Operating temperature range from -55°C to 150°C for robust performance. ESD protection rating of 1500 V (HBM) enhances reliability. Typical gate charge of 3.5 nC enabling fast switching. Maximum power dissipation of 1 W for compact designs.
Surface mount type for easy PCB assembly. Fully RoHS compliant ensuring environmental safety. Explore more in our Electronics & Electricals category to find specialized semiconductor solutions tailored for your applications.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SIB4316EDK-T1-GE3 is 6 A.
This MOSFET can handle a maximum drain-source voltage of 6 V.
The operating temperature range for this model is from -55°C to 150°C.
The typical gate charge for the Vishay SIB4316EDK-T1-GE3 is 3.5 nC.
This model is packaged in a thermally enhanced PowerPAK SC-75 package.
The SIB4316EDK-T1-GE3 has an ESD protection rating of 1500 V (HBM).
The maximum power dissipation for this model is rated at 1 W.
This MOSFET uses a surface mount type for easy PCB assembly.
Yes, the Vishay SIB4316EDK-T1-GE3 is fully RoHS compliant, ensuring environmental safety.
The maximum gate-source voltage supported by the SIB4316EDK-T1-GE3 is 12 V.
The maximum drain-source resistance (on-resistance) for this model is 0.057 Ω.
This MOSFET is suitable for applications in load switching, power management, and DC/DC converters.
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