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Vishay P-Channel MOSFET 12 A 30 V PowerPAK SC-70 Surface Mount SiA4263DJ Series SIA4263DJ-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIA4263DJ-T1-GE3 |
| Mount Type | Surface |
| Series | SiA4263DJ |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SC-70 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 199mΩ |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 19.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
Key Features
- Maximum continuous drain current of 12 A for robust performance.
- 30 V maximum drain-source voltage for reliable switching.
- Low on-resistance of 199 mOhms at VGS = -1.8 V ensures efficiency.
- Typical gate charge of 19.8 nC for fast switching.
- Maximum power dissipation of 15.6 W supports high load conditions.
- Wide operating temperature range from -55°C to 150°C.
- Maximum gate-source voltage of 8 V provides safe gate drive parameters.
- Surface mount package PowerPAK SC-70 for compact PCB designs.
Product Description
Vishay SIA4263DJ-T1-GE3 is a P-Channel MOSFET designed for power management in electronic devices. It offers a maximum continuous drain current of 12 A and supports a maximum drain-source voltage of 30 V, making it suitable for demanding switching applications.
This MOSFET is packaged in a compact PowerPAK SC-70 surface mount case, enabling efficient PCB space utilization. It features a low drain-source resistance of 199 mOhms at a gate-source voltage of -1.8 V, enhancing power efficiency and reducing thermal losses.
The device supports a typical gate charge of 19.8 nC, allowing fast switching speeds, and can dissipate up to 15.6 W of power, supporting higher load conditions while maintaining reliability.
Operating safely across a wide temperature range from -55°C to 150°C and a gate-source voltage limit of 8 V, it is well suited for automotive and industrial applications that require robust performance under varying conditions. It complies with RoHS directives, ensuring environmentally friendly manufacturing.
Common applications include battery management in mobile devices, acting as a battery switch, load switch, or PA switch, enhancing energy efficiency and system reliability in portable and embedded systems.
Maximum continuous drain current of 12 A for robust performance. 30 V maximum drain-source voltage for reliable switching. Low on-resistance of 199 mOhms at VGS = -1.8 V ensures efficiency. Typical gate charge of 19.8 nC for fast switching.
Maximum power dissipation of 15.6 W supports high load conditions. Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage of 8 V provides safe gate drive parameters. Surface mount package PowerPAK SC-70 for compact PCB designs.
RoHS compliant to meet environmental standards. Optimized for battery switch, load switch, and PA switch applications. Explore the Electronics & Electricals category for more discrete semiconductor solutions by Vishay and other leading brands on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A.
It can handle a maximum drain-source voltage of 30 V.
The on-resistance is 199 mOhms at a gate-source voltage of -1.8 V.
The typical gate charge is 19.8 nC, allowing for fast switching speeds.
The maximum power dissipation is rated at 15.6 W.
It operates safely across a wide temperature range from -55°C to 150°C.
The maximum gate-source voltage is 8 V, providing safe gate drive parameters.
It is packaged in a compact PowerPAK SC-70 surface mount case.
It complies with RoHS directives, ensuring environmentally friendly manufacturing.
It is optimized for applications such as battery management, load switching, and PA switching.
This model features a P-channel type configuration.
The country of origin for this model is India.
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