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Infineon Single IGBT Module 825 A 3300 V AG-IHVB130 FZ825R33HE4DBPSA1

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Infineon Single IGBT Module 825 A 3300 V AG-IHVB130 FZ825R33HE4DBPSA1

Name: Infineon Single IGBT Module 825 A 3300 V AG-IHVB130 FZ825R33HE4DBPSA1
Brand: Infineon
SKU: 308678
Price: 120801.58 INR
Availability: InStock

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Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	16.4mm
Length	109.9mm
Model	FZ825R33HE4DBPSA1
Configuration	Single
Maximum Operating Temperature	150°C
Package Type	AG-IHVB130
Minimum Operating Temperature	-40°C
Standards/Approvals	60749, 60068, IEC 60747
Maximum Continuous Collector Current Ic	825A
Maximum Collector Emitter Voltage Vceo	3300V
Maximum Collector Emitter Saturation Voltage VceSAT	2.65V
Maximum Power Dissipation Pd	2400kW
Maximum Gate Emitter Voltage VGEO	±20 V
Number of Transistors	2

Key Features

Incorporates TRENCHSTOP™ IGBT4 technology for high performance.
Features an AlSiC base plate for improved thermal cycling durability.
Includes a high power dissipation rating of 2400 kW suitable for demanding applications.
Designed with ±20 V maximum gate emitter voltage for reliable switching.
Operating temperature range from -40°C to 150°C ensures versatility in industrial environments.
Package type AG-IHVB130 supports robust mounting and integration.
Maximum collector emitter saturation voltage of 2.65 V ensures efficient conduction.
Contains two transistors configured as a single switch module.

Product Description

Infineon FZ825R33HE4DBPSA1 is a high-power single IGBT module built with advanced TRENCHSTOP™ IGBT4 technology and emitter-controlled diode for superior electrical performance. This module is engineered to provide a maximum continuous collector current of 825 A and withstand a maximum collector emitter voltage of 3300 V, making it ideal for demanding industrial and power electronics applications.

The module incorporates an Aluminum Silicon Carbide (AlSiC) base plate, enhancing its thermal cycling capability which improves long-term reliability under harsh thermal stresses. It offers a maximum power dissipation of 2400 kW, supporting high-energy throughput systems.

Designed for high efficiency, the module has a maximum collector emitter saturation voltage (VceSAT) of 2.65 V, ensuring low conduction losses. The maximum gate emitter voltage rating of ±20 V permits robust and precise gate control for switching operations.

This IGBT module operates reliably across a wide temperature range from -40°C to 150°C, allowing deployment in diverse industrial environments including power conversion, motor drives, and renewable energy systems. Its package type is AG-IHVB130, optimized for seamless integration with power electronic assemblies.

The product complies with IEC 60747, IEC 60749, and IEC 60068 standards, reflecting a commitment to quality and safety, although it does not conform to automotive-specific standards. The module contains two transistors configured as a single unit, designed as a single switch for straightforward circuit implementation.

Infineon single IGBT modules are widely used in industrial, manufacturing, and commercial power electronics due to their robust construction, high current density, and reliability. The module is suited for applications requiring efficient switching and high power handling, such as industrial motor controls, renewable energy inverters, and power supplies.

Package includes 1 pc Infineon FZ825R33HE4DBPSA1 Single IGBT Module, 825 A 3300 V AG-IHVB130, ready for immediate integration into power electronic equipment. Explore more Infineon semiconductor solutions and power modules within the EnvMart industrial catalog to enhance your engineering projects with reliable and cutting-edge products.