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Infineon Triple Parallel IGBT Module 650 V AG-EASY3B F3L400R07W3S5B59BPSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.4mm
Length 109.9mm
Model F3L400R07W3S5B59BPSA1
Configuration Triple Parallel
Maximum Operating Temperature 150°C
Package Type AG-EASY3B
Minimum Operating Temperature -40°C
Maximum Collector Emitter Voltage Vceo 650V
Maximum Power Dissipation Pd 20mW
Maximum Gate Emitter Voltage VGEO ±20 V
Number of Transistors 6

Key Features

  • Designed with 650 V maximum collector emitter voltage for high voltage operation.
  • Features 6 transistors configured in triple parallel for enhanced current handling.
  • Includes AG-EASY3B package type with PressFIT contact technology.
  • Operates reliably within -40°C to 150°C temperature range.
  • Utilizes TRENCHSTOP™ 5 IGBT technology to maximize efficiency up to 99%.
  • Ideal for 1000 V DC photovoltaic systems and solar energy applications.
  • Compact dimensions of 109.9 mm length and 16.4 mm height provide easy integration.
  • Equipped with ±20 V maximum gate emitter voltage for precise control.

Product Description

Infineon F3L400R07W3S5B59BPSA1 Triple Parallel IGBT Module 650 V AG-EASY3B is a high-performance power semiconductor device designed for demanding electronic applications. It features a triple parallel configuration of six transistors providing superior power and efficiency.

This module supports a maximum collector emitter voltage of 650 V and a gate emitter voltage of ±20 V, ensuring robust switching capability suitable for industrial and renewable energy systems. Its package type AG-EASY3B includes advanced PressFIT contact technology for reliable mounting without soldering.

Operational temperature range spans from -40°C to 150°C, allowing use in harsh environments. The TRENCHSTOP™ 5 IGBT technology embedded in this module boosts switching efficiency to approximately 99%, making it ideal for photovoltaic power converters with output power exceeding 100 kVA.

650 V maximum collector emitter voltage providing wide application coverage. Six transistors arranged in triple parallel for high power density. AG-EASY3B package with PressFIT contact technology for ease of assembly. Wide operating temperature range from -40°C to 150°C ensuring reliability.

TRENCHSTOP™ 5 IGBT technology enables high efficiency and performance. Compact size (length 109.9 mm, height 16.4 mm) fits diverse system designs. Maximum power dissipation rated at 20 mW for effective thermal management.

Designed primarily for 1000 V DC solar system applications permitting output above 100 kVA.

This Infineon IGBT module is highly suitable for industrial power converters, photovoltaic systems, and renewable energy power electronics requiring high switching efficiency and durability. It supports advanced electronic innovations and integration with DesignSpark software resources for PCB and mechanical design.

Explore more high-quality IGBT Modules and semiconductor components in EnvMart’s Electronics & Electricals category to meet various power management and control system requirements.

Infineon Triple Parallel IGBT Module 650 V AG-EASY3B F3L400R07W3S5B59BPSA1
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Frequently Asked Questions

The maximum collector emitter voltage for this module is 650 V, making it suitable for high voltage applications.

This model features six transistors configured in a triple parallel arrangement for enhanced current handling.

It operates reliably within a temperature range of -40°C to 150°C, allowing use in harsh environments.

The module is housed in an AG-EASY3B package type, which includes PressFIT contact technology for reliable mounting.

The maximum gate emitter voltage is ±20 V, providing precise control during operation.

It utilizes TRENCHSTOP™ 5 IGBT technology, which maximizes efficiency up to approximately 99%.

The dimensions of this model are 109.9 mm in length and 16.4 mm in height, facilitating easy integration into various systems.

The maximum power dissipation rated for this IGBT module is 20 mW, allowing for effective thermal management.

It is primarily designed for 1000 V DC photovoltaic systems and renewable energy applications, suitable for output power exceeding 100 kVA.

The triple parallel configuration enhances current handling and power density, making it suitable for demanding electronic applications.

The country of origin for this module is India.

Key features include a maximum collector emitter voltage of 650 V, a wide operating temperature range, and advanced PressFIT contact technology.

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