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Infineon 700V CoolMOS P7 N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-252 IPD70R900P7SAUMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.35mm |
| Length | 6.65mm |
| Model | IPD70R900P7SAUMA1 |
| Width | 6.42mm |
| Mount Type | Surface |
| Series | 700V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30.5W |
| Typical Gate Charge Qg @ Vgs | 6.8nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports maximum continuous drain current of 6A for moderate load handling.
- Operates at a maximum drain-source voltage of 700V enabling high-voltage switching.
- Features a low maximum drain-source resistance (Rds) of 900mΩ to reduce conduction losses.
- Compact TO-252 surface-mount package for easy PCB soldering and thermal efficiency.
- Typical gate charge of 6.8nC allows for fast gate switching transitions.
- Maximum power dissipation rating of 30.5W for thermal headroom in demanding circuits.
- Wide operating temperature range from -40°C to 150°C suitable for harsh industrial environments.
- Maximum gate-source voltage rating of 16V ensures robust gate drive protection.
Product Description
Infineon IPD70R900P7SAUMA1 is a high-voltage, N-channel CoolMOS P7 series MOSFET optimized for power switching and conversion applications. It supports a maximum continuous drain current of 6A and can withstand a drain-source voltage up to 700V, making it ideal for offline and high-voltage power supply designs.
Designed for surface-mount assembly, the device comes in a TO-252 package allowing efficient PCB mounting and excellent thermal conductivity. This enhancement-mode MOSFET controls conduction with a drain-source resistance of 900mΩ, helping to minimize power losses during operation.
The gate charge of 6.8nC enables rapid switching, enhancing efficiency in switched-mode topologies and industrial equipment requiring compact power components. It features a maximum power dissipation rating of 30.5W, providing adequate thermal margin for demanding conditions.
The MOSFET operates reliably over a wide temperature range from -40°C to 150°C, ensuring suitability for harsh environments and elevated junction temperatures. Gate-source voltage should never exceed 16V to protect device integrity, so gate drive circuits must include overvoltage clamping or level-shifting.
This device is well suited for use in switched mode power supplies, industrial converters, and compact surface-mount power assemblies requiring moderate current and high blocking voltage capabilities. Its robust design supports efficient power management across various industrial, manufacturing, and laboratory environments.
Maximum continuous drain current: 6A. Maximum drain-source voltage: 700V. Maximum power dissipation: 30.5W. Package type: TO-252 surface mount. Operating temperature range: -40°C to 150°C. Maximum gate-source voltage: 16V.
Typical gate charge: 6.8nC. Drain-source resistance: 900mΩ. Channel: N-Channel Enhancement Mode. Explore more Infineon MOSFETs and related semiconductor products for your industrial and electronic component needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6A.
It can withstand a maximum drain-source voltage of 700V.
This MOSFET comes in a TO-252 surface mount package.
The maximum power dissipation rating is 30.5W.
It operates over a wide temperature range from -40°C to 150°C.
The typical gate charge is 6.8nC.
The maximum gate-source voltage rating is 16V.
The maximum drain-source resistance is 900mΩ.
It has a pin count of 3.
This model utilizes an N-channel enhancement mode.
The height of the TO-252 package is 2.35mm.
It is well suited for switched mode power supplies and industrial converters requiring moderate current and high blocking voltage capabilities.
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