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Vishay N-Channel MOSFET SO-8 Package 4-Pin, 123 A, 40 V, Enhancement Mode SQJ152ELP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.1mm |
| Length | 5mm |
| Model | SQJ152ELP-T1_GE3 |
| Width | 6.25mm |
| Mount Type | Surface |
| Series | SQJ152ELP |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 123A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 136W |
| Typical Gate Charge Qg @ Vgs | 22.5nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Features an enhancement mode N-Channel channel type for efficient switching.
- Maximum drain-source resistance of 4 milliohms ensures low conduction losses.
- Capable of dissipating up to 136 watts maximum power.
- Operates reliably across a temperature range from -55°C to 175°C.
- Comes in a compact SO-8 PowerPAK package measuring 5 mm length, 6.25 mm width, and 1.1 mm height.
- Typical gate charge of 22.5 nC at 22.5 V gate-source voltage for fast switching.
- Maximum gate-source voltage rating is 20 V to avoid damage during operation.
- Forward voltage of 1.1 V supports efficient current flow.
Product Description
Vishay SQJ152ELP-T1_GE3 is an N-Channel MOSFET designed for high power switching applications. Featuring a maximum continuous drain current of 123 amperes and a drain-source voltage rating of 40 volts, this device supports efficient power handling in automotive and industrial electronics.
The device uses enhancement mode technology with a low maximum drain-source resistance of 4 milliohms, minimizing conduction losses to improve overall system efficiency. The MOSFET is housed in a surface mount PowerPAK SO-8 package, compact and suitable for dense electronic circuit layouts.
Operating across a wide temperature range from -55°C to 175°C, this MOSFET meets demanding industrial and automotive environmental requirements. The typical gate charge of 22.5 nC at 22.5 V gate-source voltage enables rapid switching speeds, critical for power management systems.
The maximum gate-source voltage is rated at 20 V to protect gate oxide integrity, and the forward voltage drop is 1.1 V. This device complies with the automotive industry’s AEC-Q101 standard, ensuring robustness for vehicular applications.
The 4-pin SO-8 package measures 5 mm × 6.25 mm × 1.1 mm (L×W×H), facilitating surface mounting on printed circuit boards for compact designs. Typical use cases include power supply circuits, motor control, and load switching in industrial and automotive systems.
Enhancement mode N-Channel MOSFET supports high current switching. Low on-resistance of 4 milliohms for high efficiency. Compact SO-8 PowerPAK surface mount package. Wide operating temperature range from -55°C to 175°C. Automotive AEC-Q101 qualification for reliable vehicular use.
Typical gate charge 22.5 nC enables fast switching. Power dissipation capacity of 136 W. Maximum gate-source voltage at 20 V for device protection. Forward voltage drop of 1.1 V for efficient conduction. Ideal for industrial, automotive, and power management applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 123 amperes.
This MOSFET has a drain-source voltage rating of 40 volts.
It can dissipate up to 136 watts maximum power.
The typical gate charge at 22.5 V gate-source voltage is 22.5 nC.
The maximum gate-source voltage rating for this model is 20 V.
The SO-8 package measures 5 mm in length, 6.25 mm in width, and 1.1 mm in height.
It operates reliably across a temperature range from -55°C to 175°C.
The maximum drain-source resistance is 4 milliohms.
This MOSFET uses surface mounting in its design.
It complies with the automotive industry’s AEC-Q101 standard.
This model is suitable for power supply circuits, motor control, and load switching in industrial and automotive systems.
The forward voltage drop is 1.1 V, supporting efficient current flow.
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