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Vishay N-Channel MOSFET 46 A, 80 V, 4-Pin SO-8 Package SQJA81EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 6.25mm |
| Model | SQJA81EP-T1_GE3 |
| Width | 4.8mm |
| Mount Type | Surface |
| Series | SQJA81EP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 17.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhancement mode N-Channel MOSFET suitable for power management applications.
- Maximum continuous drain current of 46 amperes ensures high current handling capability.
- Low maximum drain-source resistance of 17.3 milliohms reduces conduction losses.
- Supports a maximum gate-source voltage of ±20 V for robust driving.
- Typical gate charge of 13 nanocoulombs enables fast switching performance.
- Maximum power dissipation rating of 68 watts allows operation under demanding thermal conditions.
- Operating temperature range from -55°C to 150°C for reliability in harsh environments.
- Compact SO-8 package with dimensions 6.25mm length, 4.8mm width, and 1mm height.
Product Description
Vishay SQJA81EP-T1_GE3 N-Channel MOSFET offers a powerful and efficient switching solution suitable for industrial, automotive, and consumer electronic applications requiring reliable power control. This device is built using advanced TrenchFET Gen IV technology to ensure low on-resistance and high switching performance.
The MOSFET supports a maximum continuous drain current of 46 amperes and withstands drain-source voltages up to 80 volts, making it ideal for high current, low voltage power switching scenarios in power supplies, motor drives, and inverters.
With a maximum power dissipation rating of 68 watts and operating temperature range of -55°C to 150°C, it ensures stable performance in demanding environments including automotive and industrial thermal conditions.
The device is housed in a compact SO-8 surface-mount package, sized 6.25mm × 4.8mm × 1mm, supporting easy PCB integration and efficient thermal management.
Key electrical parameters include a maximum drain-source resistance of 17.3 milliohms and a typical gate charge of 13 nanocoulombs at gate-source voltage of 10 V, which facilitates low loss switching and reduced gate drive power requirements.
This MOSFET is 100% Rg and Unclamped Inductive Switching (UIS) tested to ensure quality and reliability for robust electronic designs. Enhancement mode N-Channel MOSFET for power electronic switching. 46 A continuous drain current capacity with low on-resistance.
Operating voltage up to 80 V drain-source maximum. Compact SO-8 package suitable for surface mounting. Robust thermal performance with 68 W power dissipation rating. Tolerant to a wide temperature range from -55°C to 150°C.
TrenchFET Gen IV technology for enhanced efficiency. 100% Rg and UIS tested for reliability.
This Vishay MOSFET is ideal for industrial controllers, automotive electronics, power management modules, and other applications requiring efficient high current switching. Explore more MOSFETs in the Semiconductor category at EnvMart.
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Frequently Asked Questions
The Vishay SQJA81EP-T1_GE3 N-Channel MOSFET has a maximum continuous drain current of 46 amperes.
This MOSFET can withstand a maximum drain-source voltage of 80 volts.
The maximum power dissipation rating of this model is 68 watts, allowing for operation under demanding thermal conditions.
The SO-8 package of this MOSFET has dimensions of 6.25mm in length, 4.8mm in width, and 1mm in height.
This MOSFET supports a maximum gate-source voltage of ±20 volts.
The typical gate charge at a gate-source voltage of 10 V is 13 nanocoulombs.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The maximum drain-source resistance for this model is 17.3 milliohms, which helps reduce conduction losses.
This model is designed for surface mounting.
The Vishay SQJA81EP-T1_GE3 features an enhancement mode N-channel configuration.
This MOSFET is suitable for power management applications, including industrial, automotive, and consumer electronics requiring reliable power control.
This device utilizes TrenchFET Gen IV technology, which enhances efficiency and performance.
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